The　deposition　of　an　organic　copper　precursor　Cu[OCHMeCH2NMe2](2)　on　the　surface　of　mesoporous　silica　MCM-41　dehydrated　at　773　K　was　studied　under　high-vacuum　conditions　by　infrared　spectroscopy　combined　with　elemental　analysis,　X-ray　absorption　spectroscopy　(XAS),　thermogravimetric　analysis　(TG),　temperature-programmed　decomposition　(TPD),　and　X-ray　photoelectron　spectroscopy　(XPS).　It　is　revealed　that　the　copper　precursor　is　chemically　adsorbed　on　the　surface　of　MCM-41　to　form　a　stable　surface　copper　complex　(SCI)　coordinated　with　two　framework　oxygen　atoms　by　ligand　exchange　at　temperatures　below　423　K.　The　surface　copper　complex　is　easily　decomposed　into　Cu(I)　and　Cu(0)　via　a　successive　two-step　pathway　upon　heating　at　temperatures　beyond　423　K.　IR　and　TPD　results　indicate　that　the　first-step　decomposition　occurs　at　the　temperature　range　from　423　to　523　K,　where　the　surface　complex　SC1　loses　one　organic　ligand　and　one　methane　molecule,　leading　to　formation　of　a　surface　intermediate　complex　(SC2)　with　a　Schiff　base　ligand.　The　second-step　decomposition　starts　at　523　K,　where　the　complex　(SC2)　is　transformed　to　Cu(0)　by　losing　the　rernanent　organic　ligand　and　undergoes　a　surface　intermediate　complex　(SO)　to　form　Cu(I)　oxide　species　by　a　consecutive　loss　of　small　molecules.　The　surface　hydroxyl　groups　participate　in　the　adsorption　and　reaction　of　the　Cu　precursor　on　the　support　MCM-41,　which　is　a　critical　factor　to　controllable　preparation　of　copper-containing　MCM-41　catalysts.　The　mechanisms　of　thermolysis　are　suggested　to　be　distinctly　different　from　its　MOCVD　pathways　reported　in　the　literature.