In　this　paper,　indium　doped　SnO2　nanorods　and　nanowires　have　been　prepared　by　the　molten　salt　method,　and　the　effects　of　indium　doping　concentration　on　the　morphology　and　electrical　properties　of　one-dimensional　(1D)　SnO2　nanostructures　have　been　studied.　It　is　found　that　indium　doping　concentration　can　affect　the　epitaxial　growth,　morphology　and　the　electrical　conductance　of　1D　SnO2　nanostructures.　It　is　also　found　that　the　element　made　by　using　6　mol%　indium　doped　SnO2　nanorods　responds　to　nitrogen　gas.