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author:

Lee, Jun Gyu (Lee, Jun Gyu.) [1] | Choo, Dong Chul (Choo, Dong Chul.) [2] | Bang, Yo Han (Bang, Yo Han.) [3] | Li, Fushan (Li, Fushan.) [4] (Scholars:李福山) | Kim, Tae Whan (Kim, Tae Whan.) [5]

Indexed by:

EI Scopus SCIE

Abstract:

Polymer light-emitting devices (PLEDs) with a MoO3 hole injection layer (HIL) were fabricated to enhance their luminance efficiency. Ultraviolet photoelectron spectroscopy spectra showed that the valence band maximum level of the MoO3 layer was located between the work function of the the indium-tin-oxide anode and the highest occupied molecular orbital level of the poly[N,N'-bis(4butylphenyl)-N, N'-bis(phenyl) benzidine] hole transport layer. The surface of the MoO3 layer formed by using an ethanol solvent was smoother than that of the MoO3 layer formed by using a deionized water solvent due to a decrease in the aggregation of the MoO3 resolved in ethanol. The MoO3 HIL decreased the operating voltage of the PLED and increased the luminance and the luminance efficiency of the PLED due to a decrease in the hole injection barrier. The operating voltage, the luminance, and the luminance efficiency of the PLEDs with the MoO3 HIL formed by using an ethanol solvent were enhanced in comparison with those of the PLEDs with a MoO3 HIL formed by using a deionized water solvent due to a decrease in the surface roughness of the HIL.

Keyword:

Hole Injection Layer MoO3 Polymer Light-Emitting Devices Surface Morphology Ultraviolet Photoelectron Spectroscopy

Community:

  • [ 1 ] [Lee, Jun Gyu]Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
  • [ 2 ] [Choo, Dong Chul]Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
  • [ 3 ] [Kim, Tae Whan]Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
  • [ 4 ] [Bang, Yo Han]Hanyang Univ, Dept Informat Display Engn, Seoul 133791, South Korea
  • [ 5 ] [Kim, Tae Whan]Hanyang Univ, Dept Informat Display Engn, Seoul 133791, South Korea
  • [ 6 ] [Li, Fushan]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China

Reprint 's Address:

  • [Kim, Tae Whan]Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea;;[Kim, Tae Whan]Hanyang Univ, Dept Informat Display Engn, Seoul 133791, South Korea

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Source :

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

ISSN: 1533-4880

Year: 2016

Issue: 2

Volume: 16

Page: 1624-1628

1 . 4 8 3

JCR@2016

1 . 1 3 4

JCR@2019

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 3

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

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