Zn(O,S)　films　were　fabricated　by　oxidizing　ZnS　thin　films　deposited　by　electron　beam　evaporation　method　onto　glass　substrates　at　temperatures　of　350-500　degrees　C　for　2　h　in　an　atmosphere　of　oxygen.　The　XRD　and　EDX　confirmed　that　the　Zn(O,　S)　films　were　obtained　successfully.　The　influence　of　the　oxidization　temperature　on　the　optical　and　electrical　properties　of　the　Zn(O,　S)　thin　films　was　investigated.　The　experimental　results　show　that　the　Zn(O,　S)　thin　film　oxidized　at　the　temperature　of　400　degrees　C　exhibits　better　properties　than　others,　with　the　transmittance　of　86%　in　the　visible　region,　the　band　gap　energy　of　3.36　eV　and　the　resistivity　of　3.22x10(3)　Omega.cm,　which　makes　it　a　potential　buffer　layer　of　solar　cell.