Influence of oxidization temperature on Zn(O,S) films deposited by electron beam evaporation - Details

author：

Chen, C. (Chen, C..) ^[1] | Cheng, S. (Cheng, S..) ^[2] | Zhang, H. (Zhang, H..) ^[3] | Zhou, H. (Zhou, H..) ^[4] | Jia, H. (Jia, H..) ^[5]

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Abstract：

Zn(O,S)　films　were　fabricated　by　oxidizing　ZnS　thin　films　deposited　by　electron　beam　evaporation　method　onto　glass　substrates　at　temperatures　of　350-500°C　for　2　h　in　an　atmosphere　of　oxygen.　The　XRD　and　EDX　confirmed　that　the　Zn(O,S)　films　were　obtained　successfully.　The　influence　of　the　oxidization　temperature　on　the　optical　and　electrical　properties　of　the　Zn(O,S)　thin　films　was　investigated.　The　experimental　results　show　that　the　Zn(O,S)　thin　film　oxidized　at　the　temperature　of　400°C　exhibits　better　properties　than　others,　with　the　transmittance　of　86%　in　the　visible　region,　the　band　gap　energy　of　3.36　eV　and　the　resistivity　of　3.22　×　103　Ω·cm,　which　makes　it　a　potential　buffer　layer　of　solar　cell.　©　2016　Wiley-VCH　Verlag　GmbH　&　Co.　KGaA,　Weinheim.

Keyword：

electron beam evaporation; optical and electrical properties; Zn(O,S) films

Community：

[ 1 ] [Chen, C.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
[ 2 ] [Cheng, S.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
[ 3 ] [Cheng, S.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou, 213164, China
[ 4 ] [Zhang, H.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
[ 5 ] [Zhang, H.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou, 213164, China
[ 6 ] [Zhou, H.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
[ 7 ] [Zhou, H.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou, 213164, China
[ 8 ] [Jia, H.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
[ 9 ] [Jia, H.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou, 213164, China

Reprint 's Address：

[Cheng, S.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou UniversityChina

Email：

sycheng@fzu.edu.cn

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Source ：

Crystal Research and Technology

ISSN： 0232-1300

Year： 2016

Issue： 5

Volume： 51

Page： 354-359

1 . 0

JCR@2016

1 . 5 0 0

JCR@2023

ESI HC Threshold：235

JCR Journal Grade：4

CAS Journal Grade：4

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 1

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