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author:

Liu, Ziyang (Liu, Ziyang.) [1] | Yin, Zhigang (Yin, Zhigang.) [2] | Chen, Shan-Ci (Chen, Shan-Ci.) [3] | Dai, Shilei (Dai, Shilei.) [4] | Huang, Jia (Huang, Jia.) [5] | Zheng, Qingdong (Zheng, Qingdong.) [6]

Indexed by:

EI Scopus SCIE

Abstract:

Insulating polymers have been recognized as a promising class of gate dielectrics for organic field-effect transistors (OFETs). However, the relative permittivity of most single polymer dielectrics is quite fixed and too low to afford low-operating voltages of OFETs. For flexible low-voltage OFETs, dielectric tunable polymer composites are highly desirable. Here, a new type of binary polymer composite dielectrics is developed by incorporating a small amount of polyacrylic acid (PAA) into poly(methyl methacrylate) (PMMA) to reduce the operating voltage and enhance the device performance. The resulting dielectric layers deliver a tunable relative permittivity from 3.32 to 4.28 with an increase of PAA contents in the composite. As results, flexible OFETs using PMMA: PAA dielectrics show greatly improved mobility and reduced threshold voltages with a low-operating voltage below -5 V. The OFETs using the composite dielectric also exhibit excellent performance stability during mechanical bending tests with different radii, where the mobility can maintain 95% of its initial value over 5000 cycles under a bending radius of 5 mm. The tunable dielectric properties and high robustness of these novel dielectrics make them promising candidates for solution-processed low-voltage flexible OFETs with low power consumption.

Keyword:

Dielectrics Flexible electronics Low-voltage Polymer composites Transistors

Community:

  • [ 1 ] [Liu, Ziyang]Fuzhou Univ, Coll Chem, Fuzhou 350116, Fujian, Peoples R China
  • [ 2 ] [Liu, Ziyang]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
  • [ 3 ] [Yin, Zhigang]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
  • [ 4 ] [Chen, Shan-Ci]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
  • [ 5 ] [Zheng, Qingdong]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
  • [ 6 ] [Dai, Shilei]Tongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China
  • [ 7 ] [Huang, Jia]Tongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China

Reprint 's Address:

  • [Yin, Zhigang]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China;;[Zheng, Qingdong]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China

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Source :

ORGANIC ELECTRONICS

ISSN: 1566-1199

Year: 2018

Volume: 53

Page: 205-212

3 . 4 9 5

JCR@2018

2 . 7 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:158

JCR Journal Grade:1

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 35

SCOPUS Cited Count: 34

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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