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author:

Liu, Z. (Liu, Z..) [1] | Yin, Z. (Yin, Z..) [2] | Chen, S.-C. (Chen, S.-C..) [3] | Dai, S. (Dai, S..) [4] | Huang, J. (Huang, J..) [5] | Zheng, Q. (Zheng, Q..) [6]

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Scopus

Abstract:

Insulating polymers have been recognized as a promising class of gate dielectrics for organic field-effect transistors (OFETs). However, the relative permittivity of most single polymer dielectrics is quite fixed and too low to afford low-operating voltages of OFETs. For flexible low-voltage OFETs, dielectric tunable polymer composites are highly desirable. Here, a new type of binary polymer composite dielectrics is developed by incorporating a small amount of polyacrylic acid (PAA) into poly(methyl methacrylate) (PMMA) to reduce the operating voltage and enhance the device performance. The resulting dielectric layers deliver a tunable relative permittivity from 3.32 to 4.28 with an increase of PAA contents in the composite. As results, flexible OFETs using PMMA:PAA dielectrics show greatly improved mobility and reduced threshold voltages with a low-operating voltage below −5 V. The OFETs using the composite dielectric also exhibit excellent performance stability during mechanical bending tests with different radii, where the mobility can maintain 95% of its initial value over 5000 cycles under a bending radius of 5 mm. The tunable dielectric properties and high robustness of these novel dielectrics make them promising candidates for solution-processed low-voltage flexible OFETs with low power consumption. © 2017 Elsevier B.V.

Keyword:

Dielectrics; Flexible electronics; Low-voltage; Polymer composites; Transistors

Community:

  • [ 1 ] [Liu, Z.]College of Chemistry, Fuzhou University, Fuzhou, Fujian 350116, China
  • [ 2 ] [Liu, Z.]State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
  • [ 3 ] [Yin, Z.]State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
  • [ 4 ] [Chen, S.-C.]State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
  • [ 5 ] [Dai, S.]School of Materials Science & Engineering, Tongji University, Shanghai, 201804, China
  • [ 6 ] [Huang, J.]School of Materials Science & Engineering, Tongji University, Shanghai, 201804, China
  • [ 7 ] [Zheng, Q.]State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China

Reprint 's Address:

  • [Zheng, Q.]State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of SciencesChina

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Source :

Organic Electronics

ISSN: 1566-1199

Year: 2018

Volume: 53

Page: 205-212

3 . 4 9 5

JCR@2018

2 . 7 0 0

JCR@2023

ESI HC Threshold:158

JCR Journal Grade:1

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 34

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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