Indexed by:
Abstract:
This paper presents a low power, energy-efficient precision CMOS temperature sensor. The front-end circuit is based on bipolar junction transistors, and employs a pre-bias circuit and bipolar core. To reduce measurement errors arising from current ratio mismatch, a new dynamic element-matching mode is proposed, which dynamically matches all current sources in the front-end circuit. The first-order fitting and third-order fitting are used to calibrate the output results. On the basis of simulation results, the sensor achieves 3 sigma-inaccuracies of +0.18/-0.13 degrees C from -55 degrees C to +125 degrees C. Measurement results demonstrate sensor 3 sigma-inaccuracies of +/- 0.2 degrees C from 0 degrees C to +100 degrees C. The circuit is implemented in 0.18 m CMOS, and consumes 6.1 A with a 1.8 V supply voltage.
Keyword:
Reprint 's Address:
Email:
Version:
Source :
MICROMACHINES
ISSN: 2072-666X
Year: 2018
Issue: 6
Volume: 9
2 . 4 2 6
JCR@2018
3 . 0 0 0
JCR@2023
ESI Discipline: ENGINEERING;
ESI HC Threshold:170
JCR Journal Grade:2
CAS Journal Grade:3
Affiliated Colleges: