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author:

Dou, Renqin (Dou, Renqin.) [1] | Zhang, Haotian (Zhang, Haotian.) [2] | Zhang, Qingli (Zhang, Qingli.) [3] | Zhuang, Naifeng (Zhuang, Naifeng.) [4] (Scholars:庄乃锋) | Liu, Wenpeng (Liu, Wenpeng.) [5] | He, Yi (He, Yi.) [6] | Chen, Yingying (Chen, Yingying.) [7] | Cheng, Maojie (Cheng, Maojie.) [8] | Luo, Jianqiao (Luo, Jianqiao.) [9] | Sun, Dunlu (Sun, Dunlu.) [10]

Indexed by:

EI Scopus SCIE

Abstract:

Large size high transparent TSAG and TSLAG single crystals of empty set 65 mm x 70 mm have been grown successfully by the Cz method. The refractive indices at 473, 532, 632.8 and 1064 nm are 1.9214 - 1.8817 for TSAG and 1.9242 - 1.8841 for TSLAG. Their Sellmeier equations are fitted. The average thermal expansion coefficients of TSAG and TSLAG at 300 - 373 K, 300 - 473 K, 300 - 573 K, 300 - 673 K, and 300 - 773 K are measured. The values of thermal expansion coefficients of TSAG and TLSAG crystals coincide within the measurement error (differ by 0.3-0.4%). The thermal diffusivity values of TSAG and TSLAG are 1.454 and 1.418 mm(2) s(-1) at 300 K, respectively. Calculated with the specific heat results, the values of thermal conductivity of TSAG and TSLAG are 4.45 and 4.20 W (m K)(-1) at 300 K. Moreover, the Verdet constants of TSAG are 218, 152, and 65 rad/m/T at 532, 633, and 1064 can, while those of TSLAG are 246, 146, and 56 rad/m/T, respectively. In further, the relationships between Verdet constant and wavelength of TSAG and TSLAG are obtained.

Keyword:

Czochralski method Thermal properties TSAG TSLAG Verdet constant

Community:

  • [ 1 ] [Dou, Renqin]Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China
  • [ 2 ] [Zhang, Haotian]Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China
  • [ 3 ] [Zhang, Qingli]Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China
  • [ 4 ] [Liu, Wenpeng]Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China
  • [ 5 ] [He, Yi]Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China
  • [ 6 ] [Chen, Yingying]Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China
  • [ 7 ] [Cheng, Maojie]Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China
  • [ 8 ] [Luo, Jianqiao]Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China
  • [ 9 ] [Sun, Dunlu]Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China
  • [ 10 ] [Zhang, Haotian]Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China
  • [ 11 ] [He, Yi]Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China
  • [ 12 ] [Chen, Yingying]Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China
  • [ 13 ] [Zhuang, Naifeng]Fuzhou Univ, Coll Chem & Chem Engn, Fuzhou 350002, Fujian, Peoples R China

Reprint 's Address:

  • [Zhang, Qingli]Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China;;[Liu, Wenpeng]Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China

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Source :

OPTICAL MATERIALS

ISSN: 0925-3467

Year: 2019

Volume: 96

2 . 7 7 9

JCR@2019

3 . 8 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:236

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 24

SCOPUS Cited Count: 23

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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