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author:

Gao, Chenghui (Gao, Chenghui.) [1] (Scholars:高诚辉) | Proudhon, Henry (Proudhon, Henry.) [2] | Liu, Ming (Liu, Ming.) [3] (Scholars:刘明)

Indexed by:

EI Scopus SCIE CSCD

Abstract:

Three-dimensional finite element modeling of the contact between a rigid spherical indenter and a rough surface is presented when considering both the loading and unloading phases. The relationships among the indentation load, displacement, contact area, and mean contact pressure for both loading and unloading are established through a curve fitting using sigmoid logistic and power law functions. The contact load is proportional to the contact area, and the mean contact pressure is related to the characteristic stress, which is dependent on the material properties. The residual displacement is proportional to the maximum indentation displacement. A proportional relationship also exists for plastically dissipated energy and work conducted during loading. The surface roughness results in an effective elastic modulus calculated from an initial unloading stiffness several times larger than the true value of elastic modulus. Nonetheless, the calculated modulus under a shallow spherical indentation can still be applied for a relative comparison.

Keyword:

contact mechanics finite element modeling indentation spherical indenter surface analysis

Community:

  • [ 1 ] [Gao, Chenghui]Fuzhou Univ, Sch Mech Engn & Automat, Fuzhou 350116, Peoples R China
  • [ 2 ] [Liu, Ming]Fuzhou Univ, Sch Mech Engn & Automat, Fuzhou 350116, Peoples R China
  • [ 3 ] [Proudhon, Henry]MINES Paris Tech, Ctr Mat, F-91003 Evry, France

Reprint 's Address:

  • 刘明

    [Liu, Ming]Fuzhou Univ, Sch Mech Engn & Automat, Fuzhou 350116, Peoples R China;;[Proudhon, Henry]MINES Paris Tech, Ctr Mat, F-91003 Evry, France

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Source :

FRICTION

ISSN: 2223-7690

CN: 10-1237/TH

Year: 2019

Issue: 6

Volume: 7

Page: 587-602

5 . 2 9

JCR@2019

6 . 3 0 0

JCR@2023

ESI Discipline: ENGINEERING;

ESI HC Threshold:150

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 21

SCOPUS Cited Count: 25

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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