High　aspect　ratio　tungsten　nanowires　have　been　prepared　by　selective　dissolution　of　Nickel-aluminum-tungsten　(NiAl-W)　alloys　which　were　directionally　solidified　at　growth　rates　varying　from　2　to　25　mu　m/s　with　a　temperature　gradient　of　300　K　center　dot　cm(-1).　Young＇s　modulus　and　electrical　resistivity　of　tungsten　nanowires　were　measured　by　metallic　mask　template　method.　The　results　show　that　the　tungsten　nanowires　with　uniform　diameter　and　high　aspect　ratio　are　well　aligned.　The　length　of　tungsten　nanowires　increases　with　prolongation　of　etching　time,　and　their　length　reaches　300　mu　m　at　14　h.　Young＇s　modulus　of　tungsten　nanowires　is　estimated　by　Hertz　and　Sneddon　models.　The　Sneddon　model　is　proper　for　estimating　the　Young＇s　modulus,　and　the　value　of　calculating　Young＇s　modulus　are　260-460　GPa　which　approach　the　value　of　bulk　tungsten.　The　resistivity　of　tungsten　nanowires　is　measured　and　fitted　with　Fuchs-Sondheimer　(FS)　+　Mayadas-Shatzkes　(MS)　model.　The　fitting　results　show　that　the　specific　resistivity　of　W　nanowires　is　a　litter　bigger　than　the　bulk　W,　and　its　value　decreases　with　decreasing　diameter.