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author:

Lin, J. (Lin, J..) [1] | Peng, J. (Peng, J..) [2] | Huang, X. (Huang, X..) [3] | Lin, Q. (Lin, Q..) [4] | Li, P. (Li, P..) [5] | Wu, X. (Wu, X..) [6] | Yang, Z. (Yang, Z..) [7]

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Scopus

Abstract:

Ferro/piezoelectric transparent materials with both excellent piezoelectricity and transparency are of great interest for irreplaceable applications in numerous fields such as photoacoustic imaging and transparent robots. Nevertheless, developing a lead-free ferroelectric ceramic that meets both distinct transparency and high piezoelectricity has always been challenging. Herein, the simple single Sm3+ doped KNN ferroelectric ceramics (xSm) are designed to improve transparency and achieve reasonable piezoelectricity. The results indicate that although the donor doping effect of Sm3+ significantly improves the transparency by mainly causing grain refinement and densification improvement, it also enhances the relaxor behavior of KNN ceramics and weakens the piezoelectricity. Despite this, with proper Sm doping, reasonable piezoelectricity can still be achieved in the xSm transparent ceramics without causing a significant decrease in Curie temperature. Ultimately, excellent comprehensive performance was achieved in the 1.0 Sm ceramic (T~65% at 900 nm, TC~395 °C, d33~65 pC/N), competitively in the KNN-based transparent ceramics. In force sensitivity testing, the 1.0 Sm ceramic also exhibits prominent force response electrical output characteristics, which is expected to be applied in smart windows that require real-time pressure detection. This work furnishes a methodology for the fabrication of KNN-based transparent piezoceramics, while contemporaneously recommending innovative perspectives for broadening their range of applications. © The Author(s) 2025.

Keyword:

KNN-based lead-free piezoelectricity smart window Transparency

Community:

  • [ 1 ] [Lin J.]Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Key Laboratory of Flexible Electronics, Fujian Normal University, Strait Laboratory of Flexible Electronics (SLoFE), Fujian, Fuzhou, 350117, China
  • [ 2 ] [Peng J.]Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Key Laboratory of Flexible Electronics, Fujian Normal University, Strait Laboratory of Flexible Electronics (SLoFE), Fujian, Fuzhou, 350117, China
  • [ 3 ] [Huang X.]Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Key Laboratory of Flexible Electronics, Fujian Normal University, Strait Laboratory of Flexible Electronics (SLoFE), Fujian, Fuzhou, 350117, China
  • [ 4 ] [Lin Q.]Institute of Advanced Ceramics, College of Materials Science and Engineering, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 5 ] [Li P.]School of Materials Science and Engineering, Liaocheng University, Shandong, Liaocheng, 252059, China
  • [ 6 ] [Wu X.]Institute of Advanced Ceramics, College of Materials Science and Engineering, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 7 ] [Yang Z.]Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Key Laboratory of Flexible Electronics, Fujian Normal University, Strait Laboratory of Flexible Electronics (SLoFE), Fujian, Fuzhou, 350117, China

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Source :

Microstructures

ISSN: 2770-2995

Year: 2025

Issue: 3

Volume: 5

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ESI Highly Cited Papers on the List: 0 Unfold All

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30 Days PV: 0

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