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author:

Meng, Hongrui (Meng, Hongrui.) [1] | Wu, Yajun (Wu, Yajun.) [2] | Zhou, Shengchao (Zhou, Shengchao.) [3] | Ma, Zizhao (Ma, Zizhao.) [4] | Min, Tai (Min, Tai.) [5] | Wang, Shaohao (Wang, Shaohao.) [6] | Xie, Yufeng (Xie, Yufeng.) [7]

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Abstract:

Memory-augmented neural network (MANN) has gained attention as a pivotal solution for few-shot learning (FSL). Among the candidates for associative memory in MANN accelerators, spin-transfer torque magnetic random-access memory (STT-MRAM) stands out for its compact cell area, long data retention time, and excellent scalability. In this paper, we propose an STT-MRAM near-memory computing (NMC) macro for MANN acceleration. The macro contains following innovations: 1) An array-level parallel computing architecture for L1 distance calculation. 2) A low-area-overhead memory-invert coding technique to reduce write energy consumption. 3) A configurable dynamic offset-compensation sense amplifier (CDOC-SA) to improve classification accuracy. Fabricated in 40nm CMOS process, our macro demonstrates an energy efficiency of 6.47 TOPS/W, achieving the classification accuracy of 98.3% and 93% for 8-way-5-shot tasks and 16-way-5-shot tasks on the Omniglot dataset. © 2025 IEEE.

Keyword:

Acceleration Associative processing Associative storage Brain Energy efficiency Energy utilization Green computing Image coding Macros Magnetic recording Memory architecture MRAM devices Neural networks Parallel architectures Particle accelerators

Community:

  • [ 1 ] [Meng, Hongrui]Fudan University, State Key Laboratory of Asic and System, School of Microelectronics, Shanghai; 200433, China
  • [ 2 ] [Wu, Yajun]Fudan University, State Key Laboratory of Asic and System, School of Microelectronics, Shanghai; 200433, China
  • [ 3 ] [Zhou, Shengchao]Fudan University, State Key Laboratory of Asic and System, School of Microelectronics, Shanghai; 200433, China
  • [ 4 ] [Ma, Zizhao]Fudan University, State Key Laboratory of Asic and System, School of Microelectronics, Shanghai; 200433, China
  • [ 5 ] [Min, Tai]Xi'An Jiaotong University, Xi'An; 710049, China
  • [ 6 ] [Wang, Shaohao]Fuzhou University, Fuzhou; 350108, China
  • [ 7 ] [Xie, Yufeng]Fudan University, State Key Laboratory of Asic and System, School of Microelectronics, Shanghai; 200433, China

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ISSN: 0271-4310

Year: 2025

Language: English

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