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author:

Meng, H. (Meng, H..) [1] | Wu, Y. (Wu, Y..) [2] | Zhou, S. (Zhou, S..) [3] | Ma, Z. (Ma, Z..) [4] | Min, T. (Min, T..) [5] | Wang, S. (Wang, S..) [6] | Xie, Y. (Xie, Y..) [7]

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Abstract:

Memory-augmented neural network (MANN) has gained attention as a pivotal solution for few-shot learning (FSL). Among the candidates for associative memory in MANN accelerators, spin-transfer torque magnetic random-access memory (STT-MRAM) stands out for its compact cell area, long data retention time, and excellent scalability. In this paper, we propose an STT-MRAM near-memory computing (NMC) macro for MANN acceleration. The macro contains following innovations: 1) An array-level parallel computing architecture for L1 distance calculation. 2) A low-area-overhead memory-invert coding technique to reduce write energy consumption. 3) A configurable dynamic offset-compensation sense amplifier (CDOC-SA) to improve classification accuracy. Fabricated in 40nm CMOS process, our macro demonstrates an energy efficiency of 6.47 TOPS/W, achieving the classification accuracy of 98.3% and 93% for 8-way-5-shot tasks and 16-way-5-shot tasks on the Omniglot dataset. © 2025 IEEE.

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  • [ 1 ] [Meng H.]Fudan University, State Key Laboratory of Asic and System, School of Microelectronics, Shanghai, 200433, China
  • [ 2 ] [Wu Y.]Fudan University, State Key Laboratory of Asic and System, School of Microelectronics, Shanghai, 200433, China
  • [ 3 ] [Zhou S.]Fudan University, State Key Laboratory of Asic and System, School of Microelectronics, Shanghai, 200433, China
  • [ 4 ] [Ma Z.]Fudan University, State Key Laboratory of Asic and System, School of Microelectronics, Shanghai, 200433, China
  • [ 5 ] [Min T.]Xi'An Jiaotong University, Xi'An, 710049, China
  • [ 6 ] [Wang S.]Fuzhou University, Fuzhou, 350108, China
  • [ 7 ] [Xie Y.]Fudan University, State Key Laboratory of Asic and System, School of Microelectronics, Shanghai, 200433, China

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ISSN: 0271-4310

Year: 2025

Language: English

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ESI Highly Cited Papers on the List: 0 Unfold All

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