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author:

Tang, Penghao (Tang, Penghao.) [1] | Sun, Jie (Sun, Jie.) [2] | Du, Zaifa (Du, Zaifa.) [3] | Fang, Aoqi (Fang, Aoqi.) [4] | Liu, Jixin (Liu, Jixin.) [5] | Wang, Rongjing (Wang, Rongjing.) [6] | Pan, Guanzhong (Pan, Guanzhong.) [7] | Xun, Meng (Xun, Meng.) [8] | Guo, Weiling (Guo, Weiling.) [9]

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EI Scopus

Abstract:

With the continuous development of graphene in the field of electronic devices, it is necessary to further develop wafer-scale high-quality graphene preparation technique. A patterning preparation technique for 2-inch wafer-scale transfer-free graphene is reported in this paper, which is innovatively applicable to a variety of substrates. Based on this technique, a 2-inch wafer-scale light-emitting diode (LED) chip with graphene transparent electrodes was fabricated. The results show that the prepared graphene has high quality and uniformity, and plays a good role in improving electrode contact and current spreading. In addition, the LEDs exhibit excellent electrical and optical performance and have a good yield. This wafer-scale graphene preparation technique avoids the damage to graphene caused by the transfer process and the patterning process, which is scalable and suitable for real applications. © The Author(s) 2025.

Keyword:

Graphene Graphene devices III-V semiconductors Light emitting diodes Substrates WSI circuits

Community:

  • [ 1 ] [Tang, Penghao]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing, China
  • [ 2 ] [Sun, Jie]College of Physics and Information Engineering, Fuzhou University and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, China
  • [ 3 ] [Sun, Jie]Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
  • [ 4 ] [Du, Zaifa]School of Physics and Electronic Information, Weifang University, Weifang, China
  • [ 5 ] [Fang, Aoqi]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing, China
  • [ 6 ] [Liu, Jixin]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing, China
  • [ 7 ] [Wang, Rongjing]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing, China
  • [ 8 ] [Pan, Guanzhong]Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
  • [ 9 ] [Xun, Meng]Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
  • [ 10 ] [Guo, Weiling]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing, China

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Source :

npj 2D Materials and Applications

Year: 2025

Issue: 1

Volume: 9

9 . 2 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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