Artificial　photoelectric　synapses　exhibit　great　potential　for　overcoming　the　Von　Neumann　bottleneck　in　computational　systems.　All-inorganic　halide　perovskites　hold　considerable　promise　in　photoelectric　synapses　due　to　their　superior　photon-harvesting　efficiency.　In　this　study,　a　novel　wavy-structured　CsPbBr3/ZnO　hybrid　film　was　realized　by　depositing　zinc　oxide　(ZnO)　onto　island-like　CsPbBr3　film　via　atomic　layer　deposition　(ALD)　at　70　degrees　C.　Due　to　the　capability　of　ALD　to　grow　high-quality　films　over　small　surface　areas,　dense　and　thin　ZnO　film　filled　the　gaps　between　the　island-shaped　CsPbBr3　grains,　thereby　enabling　reduced　light-absorption　losses　and　efficient　charge　transport　between　the　CsPbBr3　light　absorber　and　the　ZnO　electron-transport　layer.　This　ZnO/island-like　CsPbBr3　hybrid　synaptic　transistor　could　operate　at　a　drain-source　voltage　of　1.0　V　and　a　gate-source　voltage　of　0　V　triggered　by　green　light　(500　nm)　pulses　with　low　light　intensities　of　0.035　mW/cm(2).　The　device　exhibited　a　quiescent　current　of　similar　to　0.5　nA.　Notably,　after　patterning,　it　achieved　a　significantly　reduced　off-state　current　of　10(-11)　A　and　decreased　the　quiescent　current　to　0.02　nA.　In　addition,　this　transistor　was　able　to　mimic　fundamental　synaptic　behaviors,　including　excitatory　postsynaptic　currents　(EPSCs),　paired-pulse　facilitation　(PPF),　short-term　to　long-term　plasticity　(STP　to　LTP)　transitions,　and　learning-experience　behaviors.　This　straightforward　strategy　demonstrates　the　possibility　of　utilizing　neuromorphic　synaptic　device　applications　under　low　voltage　and　weak　light　conditions.