Quantum Dot Photoresists for Pixelated Color Conversion Films Based on N-Phenylmaleimide Modification - Details

author：

Jiang, Borui (Jiang, Borui.) ^[1] | Song, Boxiang (Song, Boxiang.) ^[2] | Chen, Enguo (Chen, Enguo.) ^[3] (Scholars：陈恩果) | Luo, Jiajun (Luo, Jiajun.) ^[4] | Tang, Jiang (Tang, Jiang.) ^[5]

Indexed by：

Abstract：

Photolithography　is　a　reliable　method　for　fabricating　pixelated　color　conversion　films　in　Micro-LEDs，but　it　faces　challenges　related　to　the　compatibility　of　quantum　dots（QDs）with　photoresists.　This　paper　develops　a　quantum　dot-compatible　photoresist　by　modifying　acrylic　resin　with　N-phenylmaleimide（NPMI）side　chains.　The　C==O　bonds　on　the　side　chain　groups　form　coordination　bonds　with　quantum　dots，passivating　surface　defects　and　improving　the　dispersion　of　quantum　dots.　This　enhances　the　photoluminescence　quantum　yield（PLQY）of　the　photoresist　solution，reaching　76.　1%　for　red　and　43.　4%　for　green.　Even　after　fabricating　the　color　conversion　films，the　passivation　effect　persists，with　PLQY　values　of　66.　4%　for　green　and　36.　4%　for　red.　The　minimum　pixel　size　achieved　was　a　rectangular　array　of　10　μm　×　10　μm.　The　resin　side　chain　modification　approach　in　this　study　provides　guidance　for　developing　QD-compatible　photoresists　and　offers　a　simple　and　viable　solution　for　the　commercialization　of　full-color　Micro-LED　applications.　©　2025　Editorial　Office　of　Chinese　Optics.　All　rights　reserved.

Keyword：

Color Color films Graphene quantum dots Laser beams Nanocrystals Photoluminescence Photoresists Quantum yield Semiconductor quantum dots

Community：

[ 1 ] [Jiang, Borui]Wuhan National Laboratory for Optoelectronics（WNLO）, Huazhong University of Science and Technology（HUST）, Wuhan; 430074, China
[ 2 ] [Song, Boxiang]Wuhan National Laboratory for Optoelectronics（WNLO）, Huazhong University of Science and Technology（HUST）, Wuhan; 430074, China
[ 3 ] [Chen, Enguo]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 4 ] [Chen, Enguo]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Mindu Innovation Laboratory, Fuzhou; 350108, China
[ 5 ] [Luo, Jiajun]Wuhan National Laboratory for Optoelectronics（WNLO）, Huazhong University of Science and Technology（HUST）, Wuhan; 430074, China
[ 6 ] [Tang, Jiang]Wuhan National Laboratory for Optoelectronics（WNLO）, Huazhong University of Science and Technology（HUST）, Wuhan; 430074, China

Reprint 's Address：

陈恩果
[chen, enguo]college of physics and information engineering, fuzhou university, fuzhou; 350108, china;;[chen, enguo]fujian science & technology innovation laboratory for optoelectronic information of china, mindu innovation laboratory, fuzhou; 350108, china

Email：

ceg@fzu.edu.cnjluojiajun@hust.edu.cntang@mail.hust.edu.cn

Show more details

Related Keywords：