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author:

Deng, Qian (Deng, Qian.) [1] | Tan, Xiaobo (Tan, Xiaobo.) [2] | Wen, Jiansen (Wen, Jiansen.) [3] | Li, Ruiheng (Li, Ruiheng.) [4] | Luo, Jiaxing (Luo, Jiaxing.) [5] | Xie, Yin (Xie, Yin.) [6] | Zhao, Zhilong (Zhao, Zhilong.) [7] | Sa, Baisheng (Sa, Baisheng.) [8] | Ang, Ran (Ang, Ran.) [9]

Indexed by:

EI Scopus SCIE

Abstract:

The relatively lower performance of n-type legs has significantly hindered the application of PbTe materials in medium-temperature thermoelectric (TE) power generation, underscoring the urgent need to enhance the TE performance of n-type PbTe. In this study, electron-phonon decoupling was achieved through the precise manipulation of a single copper-doping element in PbTe ( i.e. , Pb1.005- x Cu2 x + 0.003 Te), enabling the concurrent optimization of phonon transport and electrical properties. High-content Cu doping induced substantial lattice strain and abundant precipitates, which effectively scattered heat-carrying phonons and significantly reduced lattice thermal conductivity. Simultaneously, the retention of high mobility and the self-regulation of electron concentration improved electrical performance across a broad temperature range. As a result, an impressive average zT of 1.3 was achieved from 523 to 823 K in n-type Pb0.985 Cu0.043 Te. Building on this, a seven-pair TE module was fabricated, attaining an energy conversion efficiency of similar to 8 % under a temperature difference of 420 K. This work provides fresh insights into strategies for enhancing the TE performance of n-type PbTe. (c) 2025 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.

Keyword:

Electron-phonon decoupling N -type pbte Power generation Thermoelectric

Community:

  • [ 1 ] [Deng, Qian]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
  • [ 2 ] [Tan, Xiaobo]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
  • [ 3 ] [Li, Ruiheng]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
  • [ 4 ] [Luo, Jiaxing]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
  • [ 5 ] [Xie, Yin]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
  • [ 6 ] [Zhao, Zhilong]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
  • [ 7 ] [Ang, Ran]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
  • [ 8 ] [Wen, Jiansen]Fuzhou Univ, Multiscale Computat Mat Facil & Mat Genome Inst, Sch Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 9 ] [Sa, Baisheng]Fuzhou Univ, Multiscale Computat Mat Facil & Mat Genome Inst, Sch Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 10 ] [Ang, Ran]Sichuan Univ, Inst New Energy & Low Carbon Technol, Chengdu 610065, Peoples R China

Reprint 's Address:

  • [Ang, Ran]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China;;[Sa, Baisheng]Fuzhou Univ, Multiscale Computat Mat Facil & Mat Genome Inst, Sch Mat Sci & Engn, Fuzhou 350108, Peoples R China;;[Ang, Ran]Sichuan Univ, Inst New Energy & Low Carbon Technol, Chengdu 610065, Peoples R China

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Source :

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

ISSN: 1005-0302

Year: 2025

Volume: 236

Page: 86-94

1 1 . 2 0 0

JCR@2023

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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