This　work　studies　the　influences　of　sintering　aids　on　discontinuous　grain　growth　(DGG)　and　corresponding　grain　size　effect　in　Ba(Ti0.8Zr0.2)O-3　ceramic.　When　sintering　temperature　(T-S)　is　1280-1340　degrees　C,　the　DGG　phenomenon　is　observed　with　little　change　in　phase　structure,　and　grains　all　grow　from　several　to　tens　of　micrometers.　Adding　LiF　can　decrease　the　temperature　span　(T-span)　of　DGG　from　20　degrees　C　to　10　degrees　C　due　to　the　high　mobility　of　Li+;　however,　adding　Li2CO3　extends　T-span　from　20　degrees　C　to　40　degrees　C　since　it　decomposes　and　releases　gas　and　then　hinders　the　DGG　process.　Adding　SiO2　and　B2O3　decreases　the　critical　T-S　of　DGG　by　about　20-30　degrees　C　due　to　their　lower　melting　point　or　eutectic　temperature.　A　higher　critical　T-S　or　a　narrower　T-span　generally　results　in　smaller　grains　and　lower　density　before　DGG,　while　can　induce　larger　grains　and　higher　dielectric/ferroelectric　properties　after　DGG.　Obvious　dielectric　diffuseness　behavior　is　observed　after　adding　Li2CO3　or　B2O3　due　to　the　smaller　grains　or　more　pores.　The　variation　in　properties　is　consistent　with　the　grain　size　change　after　adding　sintering　aids.　This　work　shows　a　fundamental　understanding　of　sintering　aids＇　influences　on　DGG　and　provides　guidance　for　controlling　microstructure　and　properties　in　polycrystalline　ceramics.