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author:

Li, Yang (Li, Yang.) [1] | Zhang, Kaixin (Zhang, Kaixin.) [2] | Yang, Tianxi (Yang, Tianxi.) [3] | Nie, Junyang (Nie, Junyang.) [4] | Li, Qiwei (Li, Qiwei.) [5] | Zhou, Yijian (Zhou, Yijian.) [6] | Tao, Tao (Tao, Tao.) [7] | Zhi, Ting (Zhi, Ting.) [8] | Yan, Qun (Yan, Qun.) [9] | Sun, Jie (Sun, Jie.) [10] (Scholars:孙捷)

Indexed by:

EI

Abstract:

Micro light-emitting diode (Micro-LED) is considered as an ideal candidate for near-eye, outdoor display, and light field photography applications. At present, the commercialization of full-color Micro-LED is limited by the mass transfer of red, green, and blue (R-B-G) sub-pixels. Hence, we proposed a full-color scheme of vertically stacked tricolor Micro-LED layers to avoid mass transfer, which owns over 1000 PPI (pixel per inch). In this solution, the sidewall-insulated via in the epilayer plays a critical role to achieve the electrical and mechanical integration of three monochromatic Micro-LEDs with Si-based complementary metal-oxide semiconductor (CMOS) driver. Therefore, the via processes of GaN-based epilayer were investigated systematically using available semiconductor processes in this article. The inductively coupled plasma (ICP) etching was employed to create the ultra-small micro-structure array using SiO2 thin film as hard mask. Sidewall-insulated vias were fabricated with different aperture sizes (9.3, 7.5, and 3.4 μm) and a depth of about 4-μm. The vias with large aspect ratio are completely satisfy the requirement of designed vertical interconnection. This study aims to provide valuable reference for the commercial progress of high-resolution and full-color Micro-LEDs. © 2024 Elsevier B.V.

Keyword:

Epilayers Gallium nitride Integrated circuit interconnects MOS devices Pixels Semiconducting gallium compounds Semiconducting indium phosphide Semiconducting silicon compounds Surface discharges

Community:

  • [ 1 ] [Li, Yang]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 2 ] [Li, Yang]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350100, China
  • [ 3 ] [Li, Yang]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 4 ] [Zhang, Kaixin]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 5 ] [Zhang, Kaixin]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350100, China
  • [ 6 ] [Zhang, Kaixin]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 7 ] [Yang, Tianxi]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 8 ] [Yang, Tianxi]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350100, China
  • [ 9 ] [Yang, Tianxi]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 10 ] [Nie, Junyang]TCL China Star Optoelectronics Technology Co., Ltd, Shenzhen; 518132, China
  • [ 11 ] [Li, Qiwei]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 12 ] [Li, Qiwei]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350100, China
  • [ 13 ] [Li, Qiwei]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 14 ] [Zhou, Yijian]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 15 ] [Zhou, Yijian]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350100, China
  • [ 16 ] [Zhou, Yijian]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 17 ] [Tao, Tao]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering. Nanjing University, Nanjing; 210093, China
  • [ 18 ] [Zhi, Ting]College of Electronic and Optical Engineering & College of Flexible Electronics, Nanjing University of Posts and Telecommunications, Nanjing; 210023, China
  • [ 19 ] [Yan, Qun]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 20 ] [Yan, Qun]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350100, China
  • [ 21 ] [Yan, Qun]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 22 ] [Sun, Jie]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 23 ] [Sun, Jie]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350100, China
  • [ 24 ] [Sun, Jie]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China

Reprint 's Address:

  • [zhang, kaixin]fujian science & technology innovation laboratory for optoelectronic information of china, fuzhou; 350100, china;;[zhang, kaixin]national and local united engineering laboratory of flat panel display technology, fuzhou university, fuzhou; 350100, china;;[zhang, kaixin]college of physics and information engineering, fuzhou university, fuzhou; 350100, china;;

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Source :

Optics Communications

ISSN: 0030-4018

Year: 2025

Volume: 575

2 . 2 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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