Login | Cas Login
English| 简体中文| 繁体中文

  • Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
成果搜索

Advanced Search

author：

Deng, H. (Deng, H..) [1] (Scholars：邓辉) | Feng, X. (Feng, X..) [2] | Zhu, Q. (Zhu, Q..) [3] | Liu, Y. (Liu, Y..) [4] | Wang, G. (Wang, G..) [5] | Zhang, C. (Zhang, C..) [6] (Scholars：张彩霞) | Zheng, Q. (Zheng, Q..) [7] (Scholars：郑巧) | Wu, J. (Wu, J..) [8] (Scholars：吴炯桦) | Wang, W. (Wang, W..) [9] (Scholars：王伟煌) | Cheng, S. (Cheng, S..) [10] (Scholars：程树英)

Indexed by：

Scopus

Abstract：

Antimony　sulfide　(Sb2S3)　solar　cells　fabricated　via　hydrothermal　deposition　have　attracted　widespread　attention.　The　annealing　crystallization　process　plays　a　crucial　role　in　achieving　optimal　crystallinity　in　hydrothermal　Sb2S3　thin　films.　Nevertheless,　incomplete　crystallization　and　the　loss　of　sulfur　at　high-temperature　contribute　to　defect　recombination,　constraining　device　performance.　Herein,　a　two-step　rapid　thermal　processing　(RTP)　annealing　strategy　is　proposed　to　improve　the　crystal　quality　and　efficiency　of　Sb2S3　solar　cells.　The　annealing　process　in　Ar　protection　with　atmospheric　pressure　can　suppress　S　loss　caused　by　saturated　vapor　pressure.　The　two-step　RTP　annealing　with　the　330°C　low-temperature　and　370°C　high-temperature　process　ensures　high　crystallinity　and　vertical　orientations　of　Sb2S3　thin　films,　accompanied　by　a　reduction　in　defect　concentration　from　1.01　×　1012　to　5.97　×　1011　cm−3.　The　Sb2S3　solar　cell　achieves　an　efficiency　of　8.20%　with　an　enhanced　open　circuit　voltage　(VOC)　of　784　mV.　The　build-in　voltage　(Vbi)　of　1.17　V　and　irradiation-dependent　ideal　factor　(n)　of　1.48　demonstrate　enhanced　heterojunction　quality　and　suppressed　defect　recombination　in　the　devices.　The　presented　two-step　annealing　strategy　and　physical　mechanism　study　will　open　new　prospects　for　high-performance　Sb2S3　solar　cells.　©　Science　China　Press　2024.

Keyword：

defect passivation hydrothermal Sb2S3 solar cells two-step annealing

Community：

  • [ 1 ] [Deng H.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 2 ] [Deng H.]Fujian Science & amp
  • [ 3 ] Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 4 ] [Feng X.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 5 ] [Zhu Q.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 6 ] [Liu Y.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 7 ] [Wang G.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 8 ] [Zhang C.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 9 ] [Zheng Q.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 10 ] [Wu J.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 11 ] [Wu J.]Fujian Science & amp
  • [ 12 ] Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 13 ] [Wang W.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 14 ] [Cheng S.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 15 ] [Cheng S.]Fujian Science & amp
  • [ 16 ] Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China, Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou, 213164, China
  • [ 17 ] Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China, Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou, 213164, China

Reprint 's Address：

Email：

Show more details

Related Keywords：

Related Article：

Source ：

Science China Materials

ISSN： 2095-8226

Year： 2024

Issue： 11

Volume： 67

Page： 3666-3674

6 . 8 0 0

JCR@2023

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 3

Affiliated Colleges：

物理与信息工程学院、微电子学院 本学院/部未明确归属的数据

Get Fulltext

DOI Library Discovery Baidu Scholar Search SCOPUS
Online/Total：235/9556070
Address：FZU Library(No.2 Xuyuan Road, Fuzhou, Fujian, PRC Post Code：350116) Contact Us：0591-22865326
Copyright：FZU Library Technical Support：Beijing Aegean Software Co., Ltd. 闽ICP备05005463号-1