Antimony　sulfide　(Sb2S3)　solar　cells　have　attracted　extensive　attention　in　silicon-based　tandem　solar　cells.　The　performance　of　Sb2S3　devices　fabricated　by　the　vacuum　method　is　limited　by　sulfur　vacancies　(V-S)　and　surface　oxide　defects　during　high-temperature　processes.　Herein,　amorphous　Sb2S3　film　based　on　low-temperature　rapid　thermal　evaporation　(RTE)　technique　is　fabricated　to　overcome　S　loss.　Moreover,　a　sulfur-atmosphere　recrystallization　strategy　is　further　developed　to　obtain　high-quality　absorbers　from　the　amorphous　film.　The　element　content　of　Sb2S3　film　is　completely　in　accord　with　the　stoichiometric　ratio　(2:3),　and　the　surface　oxides　are　effectively　suppressed,　enhancing　V-OC　and　fill　factor.　Compared　to　the　control　directly　crystallized　film,　the　defect　concentrations　of　the　S-recrystallized　Sb2S3　film　are　reduced　by　61%,　exhibiting　better　uniformity　and　higher　PN　junction　quality.　Ultimately,　the　full-inorganic　Sb2S3　solar　cells　(FTO/TiO2/Sb2S3/Au)　achieve　an　efficiency　of　6.25%.　The　S-atmosphere　recrystallization　process　can　effectively　passivate　bulk　defects　(V-S　and　Sb2O3)　and　suppress　recombination　to　improve　device　performance,　which　will　provide　new　prospects　for　vacuum　method-based　Sb2S3　thin　film　solar　cells.