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author:

Fang, Aoqi (Fang, Aoqi.) [1] | Tang, Penghao (Tang, Penghao.) [2] | Xie, Yiyang (Xie, Yiyang.) [3] | Du, Zaifa (Du, Zaifa.) [4] | Guo, Weiling (Guo, Weiling.) [5] | Mei, Yu (Mei, Yu.) [6] | Xu, Hao (Xu, Hao.) [7] | Sun, Jie (Sun, Jie.) [8]

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Abstract:

In this paper, a uniform nanorod (NR) array is etched onto the surface of Micro-Light-Emitting-Diodes (µLEDs) and mix Ag nanoparticles (NPs) with QDs to fill the gaps between the nanorods. Simultaneously, the study utilizes graphene to connect individual nanorods and enhance current spreading. The nanorod array's structure significantly reduces the distance between the QDs and the quantum well (QW), reducing energy loss from the excitation light source through a non-radiative energy transfer (NRET) mechanism. Additionally, the Ag NPs function as localized surface plasmons (LSPs), further enhancing the CCE of QDs via the absorption resonance. In this study, the effects of two types of Ag NPs are compared with different absorption resonance peaks on device performance. The results demonstrate that Ag NPs with absorption resonance peaks matching the emission wavelength of QDs play a more crucial role in the system. This configuration achieves a CCE of 77.78% for µLEDs with nanorod arrays, operating at a current of 10 mA. Compared to the conventional µLED structure with QDs only on the surface, the proposed method improves the CCE of µLEDs by an impressive 86.5%. This outcome underscores the significant contribution of the NR structure and LSPs in enhancing the CCE of QD-µLEDs. © 2024 Wiley-VCH GmbH.

Keyword:

Conversion efficiency Energy dissipation Graphene Light emitting diodes Metal nanoparticles Nanocrystals Nanorods Semiconductor quantum dots Semiconductor quantum wells Silver nanoparticles Surface plasmons

Community:

  • [ 1 ] [Fang, Aoqi]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing; 100124, China
  • [ 2 ] [Tang, Penghao]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing; 100124, China
  • [ 3 ] [Xie, Yiyang]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing; 100124, China
  • [ 4 ] [Du, Zaifa]School of Physics and Electronic Information, Weifang University, Weifang; 261061, China
  • [ 5 ] [Guo, Weiling]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing; 100124, China
  • [ 6 ] [Mei, Yu]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing; 100124, China
  • [ 7 ] [Xu, Hao]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing; 100124, China
  • [ 8 ] [Sun, Jie]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, and College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 9 ] [Sun, Jie]Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg; 41296, Sweden

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Source :

Advanced Optical Materials

Year: 2024

Issue: 19

Volume: 12

8 . 0 0 0

JCR@2023

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ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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