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author:

Guo, Minghuang (Guo, Minghuang.) [1] | Liu, Chensi (Liu, Chensi.) [2] | Wu, Chenchen (Wu, Chenchen.) [3] | Zhu, Jingwei (Zhu, Jingwei.) [4] | Hu, Ping (Hu, Ping.) [5] | Li, Yafeng (Li, Yafeng.) [6] (Scholars:李亚峰) | Li, Junming (Li, Junming.) [7] | Wei, Mingdeng (Wei, Mingdeng.) [8] (Scholars:魏明灯)

Indexed by:

EI Scopus SCIE

Abstract:

Spiro-OMeTAD, as a crucial component of hole-transporting layer (HTL), exhibits limited mobility and conductivity, and the lithium bis-trifluoromethanesulfonimide dopant is sensitive to water vapor, which imposes restrictions on the photovoltaic properties of perovskite solar cells (PSCs). Herein, the iron-porphyrin (FePP) is introduced into Spiro-OMeTAD solution as additive, which facilitates the oxidation process of Spiro-OMeTAD, leading to the enhancement of hole mobility and hole extraction and transport. Besides, the surface Pb2+ defects of perovskite film are cured by the presence of carboxylic acids (-COOH) in FePP. As a result, the photovoltaic properties of PSCs with FePP additive have been improved with a power conversion efficiency (PCE) of 21.58%. Moreover, FePP can further anchor Li+ ions in HTL to prevent it from being invaded by water vapor. Dramatically, the degradation of unencapsulated devices with FePP is suppressed significantly, which retains 82.0% of its original PCE under 10-20% relative humidity (RH) after 7100 h and maintains about 79.6% of its original PCE under 50-60% RH after 1000 h. Thus, this study shows that the design and development of multifunctional HTL additives holds great potential for achieving highly efficient and durable PSCs. The iron-porphyrin additive can not only promote the oxidation of Spiro-OMeTAD and improve the extraction and transport of holes of HTL, but also passivate the Pb2+ defects of perovskite film and prevent the Li+ from being invaded by water vapor, which enhance the power conversion efficiency and stability of perovskite solar cells significantly.image (c) 2024 WILEY-VCH GmbH

Keyword:

additives hole-transporting layers iron-porphyrin preoxidation stability

Community:

  • [ 1 ] [Guo, Minghuang]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Xueyuan Rd 2, Fuzhou 350116, Fujian, Peoples R China
  • [ 2 ] [Liu, Chensi]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Xueyuan Rd 2, Fuzhou 350116, Fujian, Peoples R China
  • [ 3 ] [Wu, Chenchen]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Xueyuan Rd 2, Fuzhou 350116, Fujian, Peoples R China
  • [ 4 ] [Zhu, Jingwei]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Xueyuan Rd 2, Fuzhou 350116, Fujian, Peoples R China
  • [ 5 ] [Hu, Ping]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Xueyuan Rd 2, Fuzhou 350116, Fujian, Peoples R China
  • [ 6 ] [Li, Yafeng]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Xueyuan Rd 2, Fuzhou 350116, Fujian, Peoples R China
  • [ 7 ] [Li, Junming]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Xueyuan Rd 2, Fuzhou 350116, Fujian, Peoples R China
  • [ 8 ] [Wei, Mingdeng]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Xueyuan Rd 2, Fuzhou 350116, Fujian, Peoples R China
  • [ 9 ] [Liu, Chensi]Fuzhou Univ, Fujian Prov Univ, Key Lab Adv Carbon Based Funct Mat, 2 Xueyuan Rd, Fuzhou 350116, Fujian, Peoples R China
  • [ 10 ] [Li, Junming]Fuzhou Univ, Fujian Prov Univ, Key Lab Adv Carbon Based Funct Mat, 2 Xueyuan Rd, Fuzhou 350116, Fujian, Peoples R China
  • [ 11 ] [Wei, Mingdeng]Fuzhou Univ, Fujian Prov Univ, Key Lab Adv Carbon Based Funct Mat, 2 Xueyuan Rd, Fuzhou 350116, Fujian, Peoples R China

Reprint 's Address:

  • 李亚峰 魏明灯

    [Li, Yafeng]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Xueyuan Rd 2, Fuzhou 350116, Fujian, Peoples R China;;[Wei, Mingdeng]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Xueyuan Rd 2, Fuzhou 350116, Fujian, Peoples R China;;[Wei, Mingdeng]Fuzhou Univ, Fujian Prov Univ, Key Lab Adv Carbon Based Funct Mat, 2 Xueyuan Rd, Fuzhou 350116, Fujian, Peoples R China

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Source :

SOLAR RRL

ISSN: 2367-198X

Year: 2024

Issue: 8

Volume: 8

6 . 0 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

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