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author:

Lin, Heng (Lin, Heng.) [1] | Zheng, Yueting (Zheng, Yueting.) [2] | Zhong, Chao (Zhong, Chao.) [3] | Lin, Lihua (Lin, Lihua.) [4] | Yang, Kaiyu (Yang, Kaiyu.) [5] | Liu, Yang (Liu, Yang.) [6] | Hu, Hailong (Hu, Hailong.) [7] | Li, Fushan (Li, Fushan.) [8]

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Abstract:

Preparation of high-quality functional films with nanoscale thickness and tunable layers is highly preferable and indispensable for optoelectronic applications, and has drawn enormous attention from research communities. Constructing dense self-assembled monolayer films is an ideal route to realize highly ordered functional films of optoelectronic devices. Moreover, the self-assembly technique can be used to construct elaborated micro/nanoarchitecture for multifunctional and integrated devices by further incorporating patterning methods. A review bridging the controllable-assembled-monolayer technique and functional optoelectronic devices is highly desirable, which would boost the device's performance and even enable emerging applications like ultrahigh-resolution devices. Here we overview the primary mechanism, material systems, transfer methods, and device applications of the controllable-assembled-monolayers. We highlight the high-quality quasi-lattice monolayer films and corresponding potential optoelectronic applications. A systematic review of the controllable-assembled-monolayer technique will help further our understanding of its potential in constructing functional films and optoelectronic devices. © 2024 The Royal Society of Chemistry.

Keyword:

Film preparation Langmuir Blodgett films Optoelectronic devices Self assembled monolayers Thin film transistors

Community:

  • [ 1 ] [Lin, Heng]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 2 ] [Zheng, Yueting]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 3 ] [Zhong, Chao]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 4 ] [Lin, Lihua]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 5 ] [Yang, Kaiyu]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 6 ] [Liu, Yang]Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou; 350117, China
  • [ 7 ] [Hu, Hailong]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 8 ] [Hu, Hailong]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 9 ] [Li, Fushan]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 10 ] [Li, Fushan]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China

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Source :

Journal of Materials Chemistry C

ISSN: 2050-7526

Year: 2023

Issue: 4

Volume: 12

Page: 1177-1210

5 . 7

JCR@2023

5 . 7 0 0

JCR@2023

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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