The　conventional　Static　Var　Generator　(SVG)　usually　uses　IGBT　as　the　power　device　whose　switching　loss　is　high,　and　switching　frequency　is　low,　so　the　size　of　output　filter　and　heat　sink　are　large,　which　limits　the　improvement　of　its　power　density　and　efficiency.　The　switching　frequency　of　SiC-MOSFET　can　be　more　than　twice　that　of　IGBT,　and　it　can　withstand　higher　junction　temperature,　so　that　the　efficiency　and　power　density　of　SVG　devices　can　be　further　improved.　This　paper　optimized　the　design　of　SVG　from　the　perspectives　of　inverter　topology,　switching　frequency,　power　device　loss,　device　cost,　filter,　heat　sink,　etc.,　and　proposed　a　220V/50kVar　SVG　based　on　SiC-MOSFET　discrete　devices.　It　is　two-level　interleaved　as　the　power　topology,　a　single　inductance　filter　as　the　filter,　and　its　equivalent　switching　frequency　could　reach　100　kHz.　The　volume　of　the　prototype　built　is　37L,　66%　of　the　conventional　IGBT-SVG　product,　and　the　power　density　is　1.35kVar/L,　which　is　1.62　times　that　of　the　conventional　IGBT-SVG　product.　The　peak　efficiency　of　the　prototype　is　as　high　as　99.03%,　and　the　efficiency　is　up　to　98.75%　at　full　load.　©　2013　IEEE.