Tin　dioxide　nanowires　have　been　realized　via　pulsed　laser　deposition　techniques　based　on　a　sintered　cassiterite　SnO2　target,　being　deposited　on　Si　(100)　substrates　at　room　temperature.　X-ray　diffraction　indicated　that　the　nanowires　show　the　tetragonal　rutile　structure　in　the　form　of　SnO2.　Transmission　electron　microscopy　revealed　that　the　nanowires　are　structurally　perfect　and　uniform,　and　diameters　range　from　10　nm　to　30　nm,　and　lengths　of　several　hundreds　nanometers　to　a　few　micrometers.　Selected　area　electron　diffraction　and　high-resolution　transmission　electron　microscopy　verified　that　the　nanowires　grow　along　the　[110]　growth　direction.　Electric　properties　were　investigated　by　connecting　a　single　SnO2　nanowire　in　field-effect　transistor　configuration.　The　SnO2　nanowires　based　on　field-effect　transistor　devices　exhibited　that　the　SnO2　nanowires　prepared　by　our　method　hold　better　electrical　properties.　(C)　2009　Elsevier　B.V.　All　rights　reserved.