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author:

Jin, Shilin (Jin, Shilin.) [1] | Yuan, He (Yuan, He.) [2] | Pang, Tao (Pang, Tao.) [3] | Zhang, Manjia (Zhang, Manjia.) [4] | He, Youwu (He, Youwu.) [5] | Zhuang, Bin (Zhuang, Bin.) [6] | Wu, Tianmin (Wu, Tianmin.) [7] | Zheng, Yuanhui (Zheng, Yuanhui.) [8] | Chen, Daqin (Chen, Daqin.) [9]

Indexed by:

EI

Abstract:

Currently, lanthanide (Ln3+) doped Pb-free double perovskites (DPs) suffer from competitive emissions of the self-trapped exciton (STE) and Ln3+. Herein, a new type of Nd3+-doped Cs2AgInCl6 DPs with Na+/Bi3+ co-alloying is developed. Benefiting from Na+/Bi3+-induced local structural modification, both STE broadband visible luminescence and Nd3+ near-infrared (NIR) emissions are boosted via free exciton sensitization. Specifically, a total 648-fold enhancement in emitting intensities compared to the Na+/Bi3+-free counterpart is realized, with a significantly improved NIR photoluminescence quantum yield (PLQY) from 0.16% to 30.3%. First-principles density functional theory calculations, Raman spectra, and steady/transient-state PL spectra verify the modification of local site symmetry, breakdown of parity-forbidden absorption, and reduction of electron-phonon coupling via Na+/Bi3+ doping. Finally, a compact vis–NIR broadband light-emitting diode (LED) is designed by coupling the Na/Bi/Nd: Cs2AgInCl6 DP with a commercial ultraviolet LED chip, which shows promising applications in spectroscopic analyses and multifunctional lighting. © 2023 Wiley-VCH GmbH.

Keyword:

Binary alloys Chlorine compounds Density functional theory Electron-phonon interactions Excitons Indium alloys Infrared devices Light emitting diodes Luminescence Perovskite Spectroscopic analysis

Community:

  • [ 1 ] [Jin, Shilin]College of Physics and Energy, Fujian Normal University, Fujian, Fuzhou; 350117, China
  • [ 2 ] [Yuan, He]College of Physics and Energy, Fujian Normal University, Fujian, Fuzhou; 350117, China
  • [ 3 ] [Pang, Tao]Huzhou Key Laboratory of Materials for Energy Conversion and Storage, College of Science, Huzhou University, Zhejiang, Huzhou; 313000, China
  • [ 4 ] [Zhang, Manjia]College of Physics and Energy, Fujian Normal University, Fujian, Fuzhou; 350117, China
  • [ 5 ] [He, Youwu]Key Laboratory of Opto-Electronic Science and Technology for Medicine of Ministry of Education, College of Photonic and Electronic Engineering, Fujian Normal University, Fujian, Fuzhou; 350117, China
  • [ 6 ] [Zhuang, Bin]College of Physics and Energy, Fujian Normal University, Fujian, Fuzhou; 350117, China
  • [ 7 ] [Wu, Tianmin]Key Laboratory of Opto-Electronic Science and Technology for Medicine of Ministry of Education, College of Photonic and Electronic Engineering, Fujian Normal University, Fujian, Fuzhou; 350117, China
  • [ 8 ] [Zheng, Yuanhui]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fujian, Fuzhou; 350116, China
  • [ 9 ] [Zheng, Yuanhui]College of Chemistry, Fuzhou University, Fujian, Fuzhou; 350116, China
  • [ 10 ] [Chen, Daqin]College of Physics and Energy, Fujian Normal University, Fujian, Fuzhou; 350117, China
  • [ 11 ] [Chen, Daqin]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fujian, Fuzhou; 350116, China
  • [ 12 ] [Chen, Daqin]Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian, Fuzhou; 350117, China
  • [ 13 ] [Chen, Daqin]Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage, Fujian, Fuzhou; 350117, China

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Source :

Advanced Functional Materials

ISSN: 1616-301X

Year: 2023

Issue: 50

Volume: 33

1 8 . 5

JCR@2023

1 8 . 5 0 0

JCR@2023

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 22

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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