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Lead halide perovskites (LHPs) with a three-dimensional (3D) octahedral structure possess outstanding optoelectronic properties for photovoltaic application, yet the toxicity of lead has consistently impeded their commercialization. Among the various candidates, copper halide-based perovskites (CHPs) have drawn considerable interest due to their low cost, high stability and, especially, eco-friendliness. Currently, the performance of CHP solar cells is suboptimal, primarily due to their low electronic dimensionality. Reports on 3D CHPs with an octahedral structure are yet to emerge. In this study, the structure of the alloyed 3D CsPb1-xCuxBr3 constructed by corner-sharing [PbBr6] and [CuBr6] octahedra are predicted using ab initio density functional theory (DFT) calculations. By comparing different functionals, we found that the HSE06 + SOC method provides a more accurate understanding of the electronic structure of the Cu-Pb alloyed system, as opposed to PBE or PBE + SOC. Our work reveals that the more ionic Cu(II) cations lead to a competition between the individual stability of [PbBr6]/[CuBr6] octahedron and the overall stability of the 3D perovskite network. Smaller Cu(II) cations also cause a shrinkage in the lattice and promote the hybridization between Cu 3d and Br 4p orbitals. This introduces acceptor bands near the valence band maximum, resulting in very rare degenerate p-type semiconductors. Among them, Cu-rich CsPb0.875Cu0.125Br3 is a very promising candidate to replace LHP absorbing layer in solar cells by exhibiting a near-ideal direct bandgap of 1.359 eV and strong light absorption. In contrast, Cu-poor CsPb0.25Cu0.75Br3, identified as an indirect bandgap semiconductor, exhibits superior hole mobility compared to electron mobility, along with weak light absorption/reflection. These properties position it as the hole transport layer for inverted perovskite solar cells. This work sheds new light on applying 3D structured CHPs in photovoltaics and other optoelectronics. © 2025 Elsevier Ltd
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Materials Science in Semiconductor Processing
ISSN: 1369-8001
Year: 2025
Volume: 199
4 . 2 0 0
JCR@2023
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ESI Highly Cited Papers on the List: 0 Unfold All
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