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author:

Gao, Zhixiang (Gao, Zhixiang.) [1] | Ju, Xin (Ju, Xin.) [2] | Zhang, Haizhong (Zhang, Haizhong.) [3] (Scholars:张海忠) | Liu, Xiaohan (Liu, Xiaohan.) [4] | Chen, Hongyu (Chen, Hongyu.) [5] | Li, Wanfa (Li, Wanfa.) [6] | Zhang, Hongliang (Zhang, Hongliang.) [7] | Liang, Lingyan (Liang, Lingyan.) [8] | Cao, Hongtao (Cao, Hongtao.) [9]

Indexed by:

EI Scopus SCIE

Abstract:

The exploration of bionic neuromorphic chips, capable of processing sensory data in a human-like manner, is both a trend and a challenge. There is a strong demand for phototransistors that offer broadband in-sensor adaptability. This study introduces a bioinspired vision sensor based on InP quantum dots (QDs)/InSnZnO hybrid phototransistors. This novel design combines the excellent electrical transportation features of oxide semiconductors with the superior optoelectronic response of InP QDs. The resulting hybrid devices exhibit exceptional gate controllability and a robust visible-light response. These characteristics enable the emulation of multiple functions of the human visual system and the accommodation of varying light intensity environments. Furthermore, the phototransistor array successfully replicates the scotopic and photopic adaptation recognition behaviors of the human retina. Notably, the device demonstrates faultless competency in image processing, achieving an impressive 93% accuracy for digit recognition. These findings contribute to the advancement of bionic neuromorphic chips and offer promising opportunities for future developments in the bioinspired visual system. A broadband phototransistor is designed by combining the excellent electrical transportation features of oxide semiconductors with the superior optoelectronic response of InP quantum dots (QDs). The phototransistor array manifests a realistic environmental self-adaptation process on perceiving simple letters. Handwriting pattern recognition accuracy reaches 93% due to the satisfactory weight update linearity, demonstrating its faultless competence for image processing capabilities.image

Keyword:

amorphous oxide semiconductors artificial neural networks broad spectrum photoelectric synapses thin film transistors

Community:

  • [ 1 ] [Gao, Zhixiang]Chinese Acad Sci, Lab Adv Nano Mat & Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
  • [ 2 ] [Liu, Xiaohan]Chinese Acad Sci, Lab Adv Nano Mat & Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
  • [ 3 ] [Chen, Hongyu]Chinese Acad Sci, Lab Adv Nano Mat & Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
  • [ 4 ] [Li, Wanfa]Chinese Acad Sci, Lab Adv Nano Mat & Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
  • [ 5 ] [Zhang, Hongliang]Chinese Acad Sci, Lab Adv Nano Mat & Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
  • [ 6 ] [Liang, Lingyan]Chinese Acad Sci, Lab Adv Nano Mat & Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
  • [ 7 ] [Cao, Hongtao]Chinese Acad Sci, Lab Adv Nano Mat & Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
  • [ 8 ] [Gao, Zhixiang]Univ Sci & Technol China, Sch Microelect, Hefei 230026, Peoples R China
  • [ 9 ] [Ju, Xin]Agcy Sci Technol & Res, Inst Mat Res & Engn, 2 Fusionopolis Way,08-03, Innovis 138634, Singapore
  • [ 10 ] [Zhang, Haizhong]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Peoples R China
  • [ 11 ] [Li, Wanfa]Univ Sci & Technol China, Nano Sci & Technol Inst, Suzhou 215123, Peoples R China
  • [ 12 ] [Cao, Hongtao]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

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Source :

ADVANCED FUNCTIONAL MATERIALS

ISSN: 1616-301X

Year: 2023

Issue: 52

Volume: 33

1 8 . 5

JCR@2023

1 8 . 5 0 0

JCR@2023

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 10

SCOPUS Cited Count: 15

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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