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author:

Jin, Shilin (Jin, Shilin.) [1] | Yuan, He (Yuan, He.) [2] | Pang, Tao (Pang, Tao.) [3] | Zhang, Manjia (Zhang, Manjia.) [4] | He, Youwu (He, Youwu.) [5] | Zhuang, Bin (Zhuang, Bin.) [6] | Wu, Tianmin (Wu, Tianmin.) [7] | Zheng, Yuanhui (Zheng, Yuanhui.) [8] (Scholars:郑远辉) | Chen, Daqin (Chen, Daqin.) [9]

Indexed by:

EI Scopus SCIE

Abstract:

Currently, lanthanide (Ln(3+)) doped Pb-free double perovskites (DPs) suffer from competitive emissions of the self-trapped exciton (STE) and Ln(3+). Herein, a new type of Nd3+-doped Cs2AgInCl6 DPs with Na+/Bi3+ co-alloying is developed. Benefiting from Na+/Bi3+-induced local structural modification, both STE broadband visible luminescence and Nd3+ near-infrared (NIR) emissions are boosted via free exciton sensitization. Specifically, a total 648-fold enhancement in emitting intensities compared to the Na+/Bi3+-free counterpart is realized, with a significantly improved NIR photoluminescence quantum yield (PLQY) from 0.16% to 30.3%. First-principles density functional theory calculations, Raman spectra, and steady/transient-state PL spectra verify the modification of local site symmetry, breakdown of parity-forbidden absorption, and reduction of electron-phonon coupling via Na+/Bi3+ doping. Finally, a compact vis-NIR broadband light-emitting diode (LED) is designed by coupling the Na/Bi/Nd: Cs2AgInCl6 DP with a commercial ultraviolet LED chip, which shows promising applications in spectroscopic analyses and multifunctional lighting.

Keyword:

double perovskites lanthanides light-emitting diodes luminescent materials near-infrared emissions

Community:

  • [ 1 ] [Jin, Shilin]Fujian Normal Univ, Coll Phys & Energy, Fuzhou 350117, Fujian, Peoples R China
  • [ 2 ] [Yuan, He]Fujian Normal Univ, Coll Phys & Energy, Fuzhou 350117, Fujian, Peoples R China
  • [ 3 ] [Zhang, Manjia]Fujian Normal Univ, Coll Phys & Energy, Fuzhou 350117, Fujian, Peoples R China
  • [ 4 ] [Zhuang, Bin]Fujian Normal Univ, Coll Phys & Energy, Fuzhou 350117, Fujian, Peoples R China
  • [ 5 ] [Chen, Daqin]Fujian Normal Univ, Coll Phys & Energy, Fuzhou 350117, Fujian, Peoples R China
  • [ 6 ] [Pang, Tao]Huzhou Univ, Coll Sci, Huzhou Key Lab Mat Energy Convers & Storage, Huzhou 313000, Zhejiang, Peoples R China
  • [ 7 ] [He, Youwu]Fujian Normal Univ, Coll Photon & Elect Engn, Key Lab Optoelect Sci & Technol Med, Minist Educ, Fuzhou 350117, Fujian, Peoples R China
  • [ 8 ] [Wu, Tianmin]Fujian Normal Univ, Coll Photon & Elect Engn, Key Lab Optoelect Sci & Technol Med, Minist Educ, Fuzhou 350117, Fujian, Peoples R China
  • [ 9 ] [Zheng, Yuanhui]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350116, Fujian, Peoples R China
  • [ 10 ] [Chen, Daqin]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350116, Fujian, Peoples R China
  • [ 11 ] [Zheng, Yuanhui]Fuzhou Univ, Coll Chem, Fuzhou 350116, Fujian, Peoples R China
  • [ 12 ] [Chen, Daqin]Fujian Prov Collaborat Innovat Ctr Adv High Field, Fuzhou 350117, Fujian, Peoples R China
  • [ 13 ] [Chen, Daqin]Fujian Prov Engn Technol Res Ctr Solar Energy Conv, Fuzhou 350117, Fujian, Peoples R China

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Source :

ADVANCED FUNCTIONAL MATERIALS

ISSN: 1616-301X

Year: 2023

Issue: 50

Volume: 33

1 8 . 5

JCR@2023

1 8 . 5 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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