Perovskite　quantum　dots　(PQDs)　are　promising　in　the　field　of　light-emitting　diodes　(LEDs)　due　to　their　adjustable　band　gap,　high　photoluminescence　quantum　yield,　and　high　color　purity.　However,　ion　migration　is　prone　to　occur　in　the　device　due　to　the　structural　instability　of　PQDs,　resulting　in　the　degradation　of　external　quantum　efficiency.　In　this　work,　we　proposed　a　strategy　to　realize　a　perovskite　quantum　dot　light-emitting　memcapacitor　(PQLEM)　so　as　to　enhance　the　electroluminescent　performance　of　PQDs.　By　varying　the　pre-bias　voltage　and　time,　the　ion　distribution　and　trap　density　in　the　PQD　film　could　be　modified,　thereby　affecting　the　capacitance　value　and　luminous　efficiency　of　the　device.　Under　the　memcapacitive　effect,　the　external　quantum　efficiency　(EQE)　of　the　device　increases　from　an　initial　2.81　to　7.95%.　This　work　provides　a　route　for　achieving　perovskite　quantum　dot　light-emitting　devices　with　high　luminous　efficiency.　©　2023　American　Chemical　Society.