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author:

Chen, Wenwei (Chen, Wenwei.) [1] | Zheng, Canghai (Zheng, Canghai.) [2] | Pei, Jiajie (Pei, Jiajie.) [3] (Scholars:裴家杰) | Zhan, Hongbing (Zhan, Hongbing.) [4] (Scholars:詹红兵)

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EI Scopus SCIE

Abstract:

Two-dimensional (2D) transition metal chalcogenides (TMDs) are regarded as promising materials for micro-optoelectronic devices and next-generation logic devices due to their novel optoelectronic properties, such as strong excitonic effects, tunable direct bandgap from visible to near-infrared regions, valley pseudospin degree of freedom, and so on. Recently, triggered by the growing demand to optimize the performance of TMDs devices, external field regulation engineering has attracted great attention. The goal of this operation is to exploit the external fields to control exciton dynamics in 2D TMDs, including exciton formation and relaxation, and to finally achieve high-performance 2D TMDs devices. Although the regulation strategies of exciton dynamics in 2D TMDs have been well explored, the underlying mechanisms of different regulation strategies need to be further understood due to the complex many-body interactions in exciton dynamics. Here, we first give a brief summary of the fundamental processes of exciton dynamics in 2D TMDs and then summarize the main field-regulation strategies. Particular emphasis is placed on discussing the underlying mechanisms of how different field-regulation strategies control varied fundamental processes. A deep understanding of field regulation provides direct guidelines for the integrated design of 2D TMDs devices in the future.

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Community:

  • [ 1 ] [Chen, Wenwei]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Zheng, Canghai]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Pei, Jiajie]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Zhan, Hongbing]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Zhan, Hongbing]Fujian Sci & Technol Innovat Lab, Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China

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Source :

OPTICAL MATERIALS EXPRESS

ISSN: 2159-3930

Year: 2023

Issue: 4

Volume: 13

Page: 1007-1030

2 . 8

JCR@2023

2 . 8 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:49

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 5

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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