Bio-resistive　memory　devices　with　good　environmental　robustness　are　important　for　the　next　generation　of　biodegradable　electronic　devices.　In　this　field,　the　facile　achievement　of　both　resistive　switching　perfor-mance　and　environmental　robustness　is　still　challengeable.　Herein,　resistive　switching　active　oxidized　multi-walled　carbon　nanotube　(O-MWCNT)　has　been　doped　into　chitosan　(CS)　to　produce　twisted　O-MWCNT-CS　biocomposites　based　on　strong　-COO-/NH3+　electrostatic　interaction.　The　FTO/O-MWCNT-CS　(8%)/Ag　biomemorizer　can　exhibit　good　resistive　switching　performance　with　high　ON/OFF　ratio　(104.51)　and　low　setting　voltage　(0.86　V).　Besides,　this　biomemorizer　possesses　good　environmental　robustness　with　thermal　(200　degrees　C)　and　ionizing　irradiation　tolerance　(UV　exposure　for　72　h).　Ag　conductive　filament　for-mation　and　rupture　account　for　the　resistive　switching　behavior.　Specially,　the　conduction　pathways　pro-vided　by　O-MWCNT　and　its　good　radical　scavenging　ability　are　the　reason　for　the　facile　realization　of　resistive　switching　performances　even　under　large　layer　thickness.　The　facile　carboxylation　on　MWCNT　and　robust　O-MWCNT-CS　biocompoiste　together　with　good　environmental　robustness　render　the　promising　applications　as　green,　stable　and　biodegradable　electronic　devices.(c)　2023　Elsevier　B.V.　All　rights　reserved.