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author:

Lin, F. (Lin, F..) [1] | Hong, X. (Hong, X..) [2] | Chen, Z. (Chen, Z..) [3] | Zheng, Y. (Zheng, Y..) [4]

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Scopus

Abstract:

Recently, Co-based materials have been widely used as a type of supercapacitor. However, Co-based materials are highly restricted due to their low conductivity, poor cyclic performance, and large structural changes during the charge/discharge process. Carbon materials have been found to improve the electrochemistry performance of Co(OH)2. In this work, sulfur doping was used to enhance the electrochemistry performance of Co(OH)2@nitrogen-doped carbon dots (Co(OH)2@NC) via hydrothermal approach. Here, as-prepared S-Co(OH)2@NC shows an excellent specific capacitance of 730 F g−1 at 1 A g−1 (much higher than that of pristine Co(OH)2@NC (592 F g−1 at 1 A g−1)). An asymmetric supercapacitor (ASC) is assembled by S-Co(OH)2@NC (as a positive electrode) and graphene aerogels@NC (as a negative electrode), which presents a specific energy density as high as 39.59 Wh kg−1 with a power density of 639 W kg−1. Moreover, the ACS manifests extraordinary cycle stability (75% capacitance retention after 8500 cycles). In summary, sulfur doping in electrode material has been proven as an efficient approach for improving the electrochemical performance in supercapacitor devices. © 2023, The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature.

Keyword:

Carbon dots Cobalt hydroxide S-doping Storage Supercapacitor

Community:

  • [ 1 ] [Lin F.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 2 ] [Hong X.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 3 ] [Chen Z.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 4 ] [Zheng Y.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, China

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Source :

Ionics

ISSN: 0947-7047

Year: 2023

Issue: 8

Volume: 29

Page: 3249-3259

2 . 4

JCR@2023

2 . 4 0 0

JCR@2023

ESI HC Threshold:30

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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