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author:

Lin, Fanyi (Lin, Fanyi.) [1] | Hong, Xiansheng (Hong, Xiansheng.) [2] | Chen, Zihan (Chen, Zihan.) [3] | Zheng, Yuying (Zheng, Yuying.) [4] (Scholars:郑玉婴)

Indexed by:

EI Scopus SCIE

Abstract:

Recently, Co-based materials have been widely used as a type of supercapacitor. However, Co-based materials are highly restricted due to their low conductivity, poor cyclic performance, and large structural changes during the charge/discharge process. Carbon materials have been found to improve the electrochemistry performance of Co(OH)(2). In this work, sulfur doping was used to enhance the electrochemistry performance of Co(OH)(2)@nitrogen-doped carbon dots (Co(OH)(2)@NC) via hydrothermal approach. Here, as-prepared S-Co(OH)(2)@NC shows an excellent specific capacitance of 730 F g(-1) at 1 A g(-1) (much higher than that of pristine Co(OH)(2)@NC (592 F g(-1) at 1 A g(-1))). An asymmetric supercapacitor (ASC) is assembled by S-Co(OH)(2)@NC (as a positive electrode) and graphene aerogels@NC (as a negative electrode), which presents a specific energy density as high as 39.59 Wh kg(-1) with a power density of 639 W kg(-1). Moreover, the ACS manifests extraordinary cycle stability (75% capacitance retention after 8500 cycles). In summary, sulfur doping in electrode material has been proven as an efficient approach for improving the electrochemical performance in supercapacitor devices.

Keyword:

Carbon dots Cobalt hydroxide S-doping Storage Supercapacitor

Community:

  • [ 1 ] [Lin, Fanyi]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350116, Peoples R China
  • [ 2 ] [Hong, Xiansheng]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350116, Peoples R China
  • [ 3 ] [Chen, Zihan]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350116, Peoples R China
  • [ 4 ] [Zheng, Yuying]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350116, Peoples R China

Reprint 's Address:

  • 郑玉婴

    [Zheng, Yuying]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350116, Peoples R China

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Source :

IONICS

ISSN: 0947-7047

Year: 2023

Issue: 8

Volume: 29

Page: 3249-3259

2 . 4

JCR@2023

2 . 4 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:30

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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