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author:

Wu, Ming (Wu, Ming.) [1] | Cui, Hong-Hua (Cui, Hong-Hua.) [2] | Cai, Songting (Cai, Songting.) [3] | Hao, Shiqiang (Hao, Shiqiang.) [4] | Liu, Yukun (Liu, Yukun.) [5] | Bailey, Trevor P. (Bailey, Trevor P..) [6] | Zhang, Yinying (Zhang, Yinying.) [7] | Chen, Zixuan (Chen, Zixuan.) [8] | Luo, Yubo (Luo, Yubo.) [9] | Uher, Ctirad (Uher, Ctirad.) [10] | Wolverton, Christopher (Wolverton, Christopher.) [11] | Dravid, Vinayak P. (Dravid, Vinayak P..) [12] | Yu, Yan (Yu, Yan.) [13] | Luo, Zhong-Zhen (Luo, Zhong-Zhen.) [14] | Zou, Zhigang (Zou, Zhigang.) [15] | Yan, Qingyu (Yan, Qingyu.) [16] | Kanatzidis, Mercouri G. (Kanatzidis, Mercouri G..) [17]

Indexed by:

EI

Abstract:

This study investigates Ga-doped n-type PbTe thermoelectric materials and the dynamic phase conversion process of the second phases via Cu2Se alloying. Introducing Cu2Se enhances its electrical transport properties while reducing its lattice thermal conductivity (κlat) via weak electron–phonon coupling. Cu2Te and CuGa(Te/Se)2 (tetragonal phase) nanocrystals precipitate during the alloying process, resulting in Te vacancies and interstitial Cu in the PbTe matrix. At room temperature, Te vacancies and interstitial Cu atoms serve as n-type dopants, increasing the carrier concentration and electrical conductivity from ≈1.18 × 1019 cm−3 and ≈1870 S cm−1 to ≈2.26 × 1019 cm−3 and ≈3029 S cm−1, respectively. With increasing temperature, the sample exhibits a dynamic change in Cu2Te content and the generation of a new phase of CuGa(Te/Se)2 (cubic phase), strengthening the phonon scattering and obtaining an ultralow κlat. Pb0.975Ga0.025Te-3%CuSe exhibits a maximum figure of merit of ≈1.63 at 823 K, making it promising for intermediate-temperature device applications. © 2022 Wiley-VCH GmbH.

Keyword:

Alloying Carrier concentration Copper alloys IV-VI semiconductors Phonons Precipitation (chemical) Thermal conductivity Thermoelectric equipment Thermoelectricity

Community:

  • [ 1 ] [Wu, Ming]Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Cui, Hong-Hua]Mechanical and Electrical Engineering Practice Center, Fuzhou University, Fuzhou; 350108, China
  • [ 3 ] [Cai, Songting]Department of Chemistry, Northwestern University, Evanston; IL; 60208, United States
  • [ 4 ] [Cai, Songting]Department of Materials Science and Engineering, Northwestern University, Evanston; IL; 60208, United States
  • [ 5 ] [Hao, Shiqiang]Department of Materials Science and Engineering, Northwestern University, Evanston; IL; 60208, United States
  • [ 6 ] [Liu, Yukun]Department of Materials Science and Engineering, Northwestern University, Evanston; IL; 60208, United States
  • [ 7 ] [Bailey, Trevor P.]Department of Physics, University of Michigan, Ann Arbor; MI; 48109, United States
  • [ 8 ] [Zhang, Yinying]Department of Physics, University of Michigan, Ann Arbor; MI; 48109, United States
  • [ 9 ] [Chen, Zixuan]Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 10 ] [Luo, Yubo]State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan; 430074, China
  • [ 11 ] [Uher, Ctirad]Department of Physics, University of Michigan, Ann Arbor; MI; 48109, United States
  • [ 12 ] [Wolverton, Christopher]Department of Materials Science and Engineering, Northwestern University, Evanston; IL; 60208, United States
  • [ 13 ] [Dravid, Vinayak P.]Department of Materials Science and Engineering, Northwestern University, Evanston; IL; 60208, United States
  • [ 14 ] [Yu, Yan]Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 15 ] [Yu, Yan]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 16 ] [Yu, Yan]Key Laboratory of Advanced Materials Technologies, International (HongKong Macao and Taiwan) Joint Laboratory on Advanced Materials Technologies, College of Materials Science and Engineering, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 17 ] [Luo, Zhong-Zhen]Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 18 ] [Luo, Zhong-Zhen]Department of Chemistry, Northwestern University, Evanston; IL; 60208, United States
  • [ 19 ] [Luo, Zhong-Zhen]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 20 ] [Luo, Zhong-Zhen]Key Laboratory of Advanced Materials Technologies, International (HongKong Macao and Taiwan) Joint Laboratory on Advanced Materials Technologies, College of Materials Science and Engineering, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 21 ] [Luo, Zhong-Zhen]School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
  • [ 22 ] [Zou, Zhigang]Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 23 ] [Zou, Zhigang]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 24 ] [Zou, Zhigang]Eco-Materials and Renewable Energy Research Center, College of Engineering and Applied Sciences, Nanjing University, Nanjing; 210093, China
  • [ 25 ] [Yan, Qingyu]School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
  • [ 26 ] [Yan, Qingyu]Institute of Materials Research and Engineering, A*STAR, Singapore; 138634, Singapore
  • [ 27 ] [Kanatzidis, Mercouri G.]Department of Chemistry, Northwestern University, Evanston; IL; 60208, United States

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Source :

Advanced Energy Materials

ISSN: 1614-6832

Year: 2023

Issue: 1

Volume: 13

2 4 . 4

JCR@2023

2 4 . 4 0 0

JCR@2023

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 33

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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