Ultralow-Power Vertical Transistors for Multilevel Decoding Modes - Details

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Abstract：

Organic　field-effect　transistors　with　parallel　transmission　and　learning　functions　are　of　interest　in　the　development　of　brain-inspired　neuromorphic　computing.　However,　the　poor　performance　and　high　power　consumption　are　the　two　main　issues　limiting　their　practical　applications.　Herein,　an　ultralow-power　vertical　transistor　is　demonstrated　based　on　transition-metal　carbides/nitrides　(MXene)　and　organic　single　crystal.　The　transistor　exhibits　a　high　JON　of　16.6 mA　cm−2　and　a　high　JON/JOFF　ratio　of　9.12　×　105　under　an　ultralow　working　voltage　of　−1 mV.　Furthermore,　it　can　successfully　simulate　the　functions　of　biological　synapse　under　electrical　modulation　along　with　consuming　only　8.7　aJ　of　power　per　spike.　It　also　permits　multilevel　information　decoding　modes　with　a　significant　gap　between　the　readable　time　of　professionals　and　nonprofessionals,　producing　a　high　signal-to-noise　ratio　up　to　114.15 dB.　This　work　encourages　the　use　of　vertical　transistors　and　organic　single　crystal　in　decoding　information　and　advances　the　development　of　low-power　neuromorphic　systems.　©　2022　Wiley-VCH　GmbH.

Keyword：

artificial synapses microspacing in-air sublimation organic vertical transistors ultralow power consumption

Community：

[ 1 ] [Zhang, Q.]Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
[ 2 ] [Zhang, Q.]Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
[ 3 ] [Li, E.]National and Local United Engineering Lab of Flat Panel Display Technology, Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350108, China
[ 4 ] [Li, E.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
[ 5 ] [Wang, Y.]Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
[ 6 ] [Gao, C.]National and Local United Engineering Lab of Flat Panel Display Technology, Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350108, China
[ 7 ] [Gao, C.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
[ 8 ] [Wang, C.]Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
[ 9 ] [Wang, C.]Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
[ 10 ] [Li, L.]Institute of Molecular Plus, Tianjin University, Tianjin, 300072, China
[ 11 ] [Geng, D.]Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin, 300072, China
[ 12 ] [Chen, H.]National and Local United Engineering Lab of Flat Panel Display Technology, Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350108, China
[ 13 ] [Chen, H.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
[ 14 ] [Chen, W.]Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
[ 15 ] [Chen, W.]Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
[ 16 ] [Hu, W.]Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
[ 17 ] [Hu, W.]Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin, 300072, China

Reprint 's Address：

[Chen, H.]National and Local United Engineering Lab of Flat Panel Display Technology, China;;[Geng, D.]Tianjin Key Laboratory of Molecular Optoelectronic Sciences, China

Email：

hpchen@fzu.edu.cn |
gengdechao_1987@tju.edu.cn

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Source ：

Advanced Materials

ISSN： 0935-9648

Year： 2023

Issue： 3

Volume： 35

2 7 . 4

JCR@2023

2 7 . 4 0 0

JCR@2023

ESI HC Threshold：49

JCR Journal Grade：1

CAS Journal Grade：1

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 28

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 0

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