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author:

Wang, Xiumei (Wang, Xiumei.) [1] | Yang, Huihuang (Yang, Huihuang.) [2] | Li, Enlong (Li, Enlong.) [3] | Cao, Chunbin (Cao, Chunbin.) [4] | Zheng, Wen (Zheng, Wen.) [5] | Chen, Huipeng (Chen, Huipeng.) [6] (Scholars:陈惠鹏) | Li, Wenwu (Li, Wenwu.) [7]

Indexed by:

EI Scopus SCIE

Abstract:

Stretchable synaptic transistors, a core technology in neuromorphic electronics, have functions and structures similar to biological synapses and can concurrently transmit signals and learn. Stretchable synaptic transistors are usually soft and stretchy and can accommodate various mechanical deformations, which presents significant prospects in soft machines, electronic skin, human-brain interfaces, and wearable electronics. Considerable efforts have been devoted to developing stretchable synaptic transistors to implement electronic device neuromorphic functions, and remarkable advances have been achieved. Here, this review introduces the basic concept of artificial synaptic transistors and summarizes the recent progress in device structures, functional-layer materials, and fabrication processes. Classical stretchable synaptic transistors, including electric double-layer synaptic transistors, electrochemical synaptic transistors, and optoelectronic synaptic transistors, as well as the applications of stretchable synaptic transistors in light-sensory systems, tactile-sensory systems, and multisensory artificial-nerves systems, are discussed. Finally, the current challenges and potential directions of stretchable synaptic transistors are analyzed. This review presents a detailed introduction to the recent progress in stretchable synaptic transistors from basic concept to applications, providing a reference for the development of stretchable synaptic transistors in the future.

Keyword:

applications artificial synapses neuromorphic electronics stretchable synaptic devices stretchable synaptic transistors

Community:

  • [ 1 ] [Wang, Xiumei]Anhui Agr Univ, Sch Sci, Hefei 230036, Peoples R China
  • [ 2 ] [Yang, Huihuang]Anhui Agr Univ, Sch Sci, Hefei 230036, Peoples R China
  • [ 3 ] [Cao, Chunbin]Anhui Agr Univ, Sch Sci, Hefei 230036, Peoples R China
  • [ 4 ] [Zheng, Wen]Anhui Agr Univ, Sch Sci, Hefei 230036, Peoples R China
  • [ 5 ] [Li, Enlong]Fudan Univ, Inst Optoelect, Dept Mat Sci, Shanghai Frontiers Sci Res Base Intelligent Optoel, Shanghai 200433, Peoples R China
  • [ 6 ] [Li, Wenwu]Fudan Univ, Inst Optoelect, Dept Mat Sci, Shanghai Frontiers Sci Res Base Intelligent Optoel, Shanghai 200433, Peoples R China
  • [ 7 ] [Zheng, Wen]Anhui Agr Univ, Sch Informat & Comp, Hefei 230036, Peoples R China
  • [ 8 ] [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350002, Peoples R China
  • [ 9 ] [Chen, Huipeng]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 10 ] [Li, Wenwu]Fudan Univ, Zhangjiang Fudan Int Innovat Ctr, Natl Key Lab Integrated Circuit Chips & Syst, Shanghai 200433, Peoples R China

Reprint 's Address:

  • [Wang, Xiumei]Anhui Agr Univ, Sch Sci, Hefei 230036, Peoples R China;;[Li, Wenwu]Fudan Univ, Inst Optoelect, Dept Mat Sci, Shanghai Frontiers Sci Res Base Intelligent Optoel, Shanghai 200433, Peoples R China;;[Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350002, Peoples R China;;[Chen, Huipeng]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China;;[Li, Wenwu]Fudan Univ, Zhangjiang Fudan Int Innovat Ctr, Natl Key Lab Integrated Circuit Chips & Syst, Shanghai 200433, Peoples R China;;

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Source :

SMALL

ISSN: 1613-6810

Year: 2023

Issue: 18

Volume: 19

1 3 . 0

JCR@2023

1 3 . 0 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 37

SCOPUS Cited Count: 38

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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