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author:

Zhang, Linchen (Zhang, Linchen.) [1] | Xu, Ke (Xu, Ke.) [2] | Wei, Fanan (Wei, Fanan.) [3]

Indexed by:

EI

Abstract:

Low-dimensional nanomaterials are receiving widespread attention as one ideal material for manufacturing high-performance electronic switches, which play an important role in improving the reliability, working speed and miniaturization of electron devices. This article reviews 16 classes of low-dimensional nanomaterials used to prepare or refine micro-/nanoelectromechanical switches, molecular electrical switches, resistive switches for memory, molecular switches, spin switches and radio frequency switches. By classifying the size difference into zero-dimensional (0D) nanomaterials, one-dimensional (1D) nanomaterials and two-dimensional (2D) nanomaterials, the effect of nanomaterials on the switching performance and the progress of application in related electronic devices are reviewed. By comparison, we discovered the advantages of low-dimensional nanomaterial-based electronic switches compared to conventional semiconductor switches. Finally, the development direction, challenges and opportunities of low-dimensional nanomaterials for improving electronic device performance are presented, and future research directions are predicted. © 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.

Keyword:

Electric switches Electron devices Nanostructured materials Thermoelectric equipment

Community:

  • [ 1 ] [Zhang, Linchen]School of Electrical & Control Engineering, Shenyang Jianzhu University, Shenyang, China
  • [ 2 ] [Xu, Ke]School of Electrical & Control Engineering, Shenyang Jianzhu University, Shenyang, China
  • [ 3 ] [Wei, Fanan]School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou, China

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Source :

Journal of Materials Science

ISSN: 0022-2461

Year: 2023

Issue: 5

Volume: 58

Page: 2087-2110

3 . 5

JCR@2023

3 . 5 0 0

JCR@2023

ESI HC Threshold:49

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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