Synaptic　devices　are　progressing　towards　large-scale　integration,　but　artificial　neuron　device　research　is　still　in　its　infancy.　NbOx　is　an　artificial　neuron　core　material,　but　the　Vth,　Vhold　of　the　threshold　shift　of　NbOx　will　shift　within　a　certain　range,　which　will　be　unfavorable　for　making　oscillating　neurons.In　this　paper,　We　explore　the　Vth　and　Vhold　shift　and　electrical　properties　of　NbOx　volatile　memristor　in　different　temperatures.　The　results　indicate　that　the　window　of　I-V　behaves　more　stable　at　low　temperatures,　and　higher　temperatures　would　make　the　window　stochastic　increasing　and　more　prone　to　failure.　Furthermore,　this　suggests　that　the　reduction　of　the　high　resistance　state　of　the　volatile　NbOx　memristor　is　due　to　the　reduction　of　the　Schottky　barrier.　©　2022　SPIE.