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author:

Yang, Chen (Yang, Chen.) [1] | Fan, Chenli (Fan, Chenli.) [2] | Hussain, Fayaz (Hussain, Fayaz.) [3] | Ye, Zijun (Ye, Zijun.) [4] | Sheng, Weiqing (Sheng, Weiqing.) [5] | Song, Kaixin (Song, Kaixin.) [6] | Muhammad, Raz (Muhammad, Raz.) [7] | Wu, Jun (Wu, Jun.) [8] | Huang, Qingming (Huang, Qingming.) [9] | Wang, Huanping (Wang, Huanping.) [10] | Su, Weitao (Su, Weitao.) [11] | Xu, Junming (Xu, Junming.) [12] | Sun, Shikuan (Sun, Shikuan.) [13] | Wang, Dawei (Wang, Dawei.) [14]

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EI

Abstract:

The blue-green emitting La2MgZr1-xSnxO6: 0.02Bi3+ (x = 0–1, abbreviated as LMZ: Bi3+, xSn4+) phosphors with a double-perovskite structure were prepared through a conventional high-temperature solid-state method. A complex ionic substitution phenomenon of selective occupation of Bi3+ in the host of LMZ was observed with Sn4+ doping which was explained on the basis of Rietveld refinement, density functional theory (DFT) calculation and UV–vis spectroscopy results. Fluorescence spectrum analysis showed that LMZ: 0.02Bi3+ emitted a broad green light band with a range of 375–650 nm. With the increase of the Sn4+ concentration replacing Zr4+, the intensity of green light was firstly enhanced and then gradually decreases until disappeared. The emission peak of blue light appears near 400 nm and then its intensity gradually increased. Through Gaussian deconvolution and fluorescence decay curve, it was found that there were two luminescence centers in LMZ: 0.02Bi3+, and three luminescence centers in LMZ: 0.02Bi3+,0.6Sn4+, respectively, which were determined by the Van Uitert empirical formula combined with the energy level splitting theory. The above results demonstrate that how to tune emission color by the substitution of B-site in double perovskite phosphors, which is attractive for future applications. © 2022 Elsevier B.V.

Keyword:

Density functional theory Energy transfer Fluorescence Light Perovskite Phosphors Phosphorus Rietveld refinement Spectrum analysis

Community:

  • [ 1 ] [Yang, Chen]College of Electronics Information, Hangzhou Dianzi University, Hangzhou; 310018, China
  • [ 2 ] [Fan, Chenli]College of Electronics Information, Hangzhou Dianzi University, Hangzhou; 310018, China
  • [ 3 ] [Hussain, Fayaz]Department of Materials Engineering, NED University of Engineering and Technology, Main University Road, Karachi; 75270, Pakistan
  • [ 4 ] [Ye, Zijun]College of Electronics Information, Hangzhou Dianzi University, Hangzhou; 310018, China
  • [ 5 ] [Sheng, Weiqing]College of Electronics Information, Hangzhou Dianzi University, Hangzhou; 310018, China
  • [ 6 ] [Song, Kaixin]College of Electronics Information, Hangzhou Dianzi University, Hangzhou; 310018, China
  • [ 7 ] [Muhammad, Raz]Department of Physics, Abdul Wali Khan University Mardan, KP, Mardan; 23200, Pakistan
  • [ 8 ] [Wu, Jun]College of Electronics Information, Hangzhou Dianzi University, Hangzhou; 310018, China
  • [ 9 ] [Huang, Qingming]Testing Center of Fuzhou University, Fuzhou University, Fuzhou; 350116, China
  • [ 10 ] [Wang, Huanping]College of Materials Sciences and Engineering, China Jiliang University, Hangzhou; 310018, China
  • [ 11 ] [Su, Weitao]College of Sciences, Hangzhou Dianzi University, Hangzhou; 310018, China
  • [ 12 ] [Xu, Junming]College of Electronics Information, Hangzhou Dianzi University, Hangzhou; 310018, China
  • [ 13 ] [Sun, Shikuan]School of Material Science and Energy Engineering, Foshan University, Foshan; 528000, China
  • [ 14 ] [Wang, Dawei]Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen; 518055, China

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Source :

Journal of Alloys and Compounds

ISSN: 0925-8388

Year: 2022

Volume: 902

6 . 2

JCR@2022

5 . 8 0 0

JCR@2023

ESI HC Threshold:91

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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