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Abstract:
Single-atom metal-insulator-semiconductor (SMIS) heterojunctions based on Sn-doped Fe2O3 nanorods (SF NRs) were designed by combining atomic deposition of an Al2O3 overlayer with chemical grafting of a RuOx hole-collector for efficient CO2-to-syngas conversion. The RuOx-Al2O3-SF photoanode with a 3.0 nm thick Al2O3 overlayer gave a >5-fold-enhanced IPCE value of 52.0 % under 370 nm light irradiation at 1.2 V vs. Ag/AgCl, compared to the bare SF NRs. The dielectric field mediated the charge dynamics at the Al2O3/SF NRs interface. Accumulation of long-lived holes on the surface of the SF NRs photoabsorber aids fast tunneling transfer of hot holes to single-atom RuOx species, accelerating the O2-evolving reaction kinetics. The maximal CO-evolution rate of 265.3 mmol g−1 h−1 was achieved by integration of double SIMS-3 photoanodes with a single-atom Ni-doped graphene CO2-reduction-catalyst cathode; an overall quantum efficiency of 5.7 % was recorded under 450 nm light irradiation. © 2021 Wiley-VCH GmbH
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Angewandte Chemie - International Edition
ISSN: 1433-7851
Year: 2021
Issue: 29
Volume: 60
Page: 16009-16018
1 6 . 8 2 3
JCR@2021
1 6 . 1 0 0
JCR@2023
ESI HC Threshold:117
JCR Journal Grade:1
CAS Journal Grade:2
Cited Count:
SCOPUS Cited Count: 47
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 0
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