Ce3+-doped　rare-earth　iron　garnet　is　a　hot　magneto-optical　material　in　the　field　of　optical　communication　and　information　technology.　However,　the　integration　of　magneto-optical　devices　has　encountered　difficulties　due　to　the　poor-quality　film　deposited　on　Si.　This　paper　focuses　on　high-quality　Si-based　(Gd2Ce)Fe5O12　and　(Gd2Ce)(Fe4Ga)O12　thin　films　by　using　radio　frequency　magnetron　sputtering　method.　It　was　found　that　the　introduction　of　Ga3+　ions　can　protect　Ce3+　from　oxidation,　stabilize　the　garnet　phase,　improve　the　optical　transmittance,　and　reduce　the　lattice　mismatch　between　the　thin　film　and　the　Si　substrate.　And　heating　the　substrate　at　500　is　conducive　to　grow　high-quality　Si-based　films.　The　(Gd2Ce)(Fe4Ga)O12/Si　thin　film　has　the　strong　Kerr　magneto-optical　effect　and　the　pretty　high　coercivity.　Moreover,　this　film　has　the　obvious　out-of-plane　magnetic　anisotropy　and　its　vertical　matrix　ratio　close　to　1,　which　indicates　that　it　has　the　considerable　prospects　for　high-density　perpendicular　magnetic　recording.　©　2021　Elsevier　B.V.