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author:

Yang, Ruijie (Yang, Ruijie.) [1] | Zhang, Yuefeng (Zhang, Yuefeng.) [2] | Fan, Yingying (Fan, Yingying.) [3] | Wang, Renheng (Wang, Renheng.) [4] | Zhu, Rongshu (Zhu, Rongshu.) [5] | Tang, Yuxin (Tang, Yuxin.) [6] (Scholars:汤育欣) | Yin, Zongyou (Yin, Zongyou.) [7] | Zeng, Zhiyuan (Zeng, Zhiyuan.) [8]

Indexed by:

EI SCIE

Abstract:

Indium vanadate (InVO4) is an up-and-coming semiconductor photocatalyst for energy/environment-related applications, and has attracted tremendous attention in the last few decades, owing to its suitable band gap, high thermal and chemical stability, and outstanding photocatalytic performance. However, the low solar-energy utilization efficiency of InVO4 material constrains its further development, mainly due to the sluggish separation and migration kinetics of charge carriers. Fortunately, recent breakthroughs have been achieved in both enhancing the efficiency and clarifying the underlying mechanism for photocatalytic applications. Therefore, it is necessary and urgent to summarize these research efforts and breakthroughs upon InVO4-based nanomaterials to improve the photocatalytic efficiency and speed up the commercialization. In this review, we systematically summarize the recent experimental and computational developments of the modifications of InVO4-based photocatalysts by morphology control, element doping, and hetero-junction construction. Then, we give an overview of their promising photocatalytic applications. Finally, the perspectives on the challenges faced and potential future research directions on InVO4-based photocatalysts is given. We aim to provide guideline for the rational design and fabrication of high efficient InVO4-based photocatalysts for energy and environmental applications.

Keyword:

Element doping Energy and environmental applications Hetero-junction construction InVO4 Morphology control Photocatalysis

Community:

  • [ 1 ] [Yang, Ruijie]City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, 83 Tat Chee Ave, Hong Kong 999077, Peoples R China
  • [ 2 ] [Zhang, Yuefeng]City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, 83 Tat Chee Ave, Hong Kong 999077, Peoples R China
  • [ 3 ] [Fan, Yingying]City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, 83 Tat Chee Ave, Hong Kong 999077, Peoples R China
  • [ 4 ] [Zeng, Zhiyuan]City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, 83 Tat Chee Ave, Hong Kong 999077, Peoples R China
  • [ 5 ] [Wang, Renheng]Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen 518060, Peoples R China
  • [ 6 ] [Zhu, Rongshu]Harbin Inst Technol Shenzhen, Shenzhen Key Lab Organ Pollut Prevent & Control, Shenzhen 518055, Peoples R China
  • [ 7 ] [Tang, Yuxin]Fuzhou Univ, Coll Chem Engn, Fuzhou 350116, Peoples R China
  • [ 8 ] [Yin, Zongyou]Australian Natl Univ, Res Sch Chem, Canberra, ACT 2601, Australia

Reprint 's Address:

  • 汤育欣

    [Zeng, Zhiyuan]City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, 83 Tat Chee Ave, Hong Kong 999077, Peoples R China;;[Tang, Yuxin]Fuzhou Univ, Coll Chem Engn, Fuzhou 350116, Peoples R China;;[Yin, Zongyou]Australian Natl Univ, Res Sch Chem, Canberra, ACT 2601, Australia

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Source :

CHEMICAL ENGINEERING JOURNAL

ISSN: 1385-8947

Year: 2022

Volume: 428

1 5 . 1

JCR@2022

1 3 . 4 0 0

JCR@2023

ESI Discipline: ENGINEERING;

ESI HC Threshold:66

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 58

SCOPUS Cited Count: 65

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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