With　the　increase　in　frequency,　IGBT　can　generate　serious　electromagnetic　interference　(EMI)　when　it　is　turned　on　and　off　quickly.　The　variations　in　voltage　and　current　produced　by　switching　devices　in　the　transient　process　are　the　main　sources　of　high-frequency　EMI.　The　ultrafast　switching　characteristics　of　IGBT　(i.e.,　high　du/dt　or　di/dt)　will　cause　serious　switching　oscillation,　EMI　noise,　and　additional　power　loss.　The　speed　of　voltage　and　current　variations　in　transient　process　is　determined　by　the　interelectrode　capacitances　of　the　semiconductor　switch.　Due　to　the　structural　characteristics　of　IGBT,　the　interelectrode　capacitances　will　change　based　on　the　difference　in　external　voltage.　This　article　introduces　an　improved　method　to　measure　the　parasitic　inductance　and　resistance　of　IGBT.　This　method　perfectly　avoids　the　interference　of　Z(ground)　which　refers　to　the　floating　terminal　impedance　to　the　ground.　The　parasitic　parameters　of　IGBT　can　be　obtained　by　fitting　the　impedance　of　IGBT　with　genetic　algorithm.　The　article　also　introduces　a　method　to　measure　the　parasitic　parameters　of　IGBT　on　bias　voltage　with　impedance　analyzer　and　dc　source.　In　the　experiment,　the　capacitance　is　used　to　protect　the　impedance　analyzer　to　avoid　the　dc　current　from　the　dc　source.　Finally,　a　double-pulse　test　circuit　is　used　to　verify　the　parasitic　parameter　model　of　IGBT　measured　in　this　article.　By　comparing　the　current　and　voltage　waveforms　when　IGBT　is　turned　on　and　off　and　the　voltage　frequency　domain　waveforms　in　multiple　cycles,　it　is　proved　that　the　parasitic　parameter　model　of　IGBT　is　applicable　to　the　circuit.