Changing　the　direction　of　horizontal　nanowires　to　extend　them　in　the　z　direction　and　grow　obliquely　has　important　practical　significance　for　achieving　higher　density　integration　and　making　it　have　more　free　space　in　multi-dimension.　However,　how　to　guide　the　horizontal　nanowires　to　extend　in　the　z　direction　and　grow　obliquely　is　still　a　challenge.　In　this　paper,　we　report　the　regular　and　horizontal　beta-Ga2O3　nanostructure　grown　on　c-plane　Al2O3　substrates,　and　the　evolution　of　beta-Ga2O3　nanowires　from　horizontal　growth　to　obliquely　upward　growth　through　the　chemical　vapor　deposition　(CVD)　method.　Field-emission　scanning　electron　microscopy,　field-emission　transmission　electron　microscopy,　X-ray　diffraction,　Raman　spectrum　and　photoluminescence　spectroscopy　were　used　to　investigate　the　morphology,　structure,　components,　and　optical　properties　of　the　assynthesized　beta-Ga2O3　nanowires.　Due　to　the　change　of　the　growth　interface　at　the　Au　catalysts,　there　are　four　different　growth　modes　for　the　growth　of　beta-Ga2O3　nanowires.　The　preparation　route　reported　in　this　study　is　more　simple,　general　and　low-cost　compared　to　other　common　growth　methods　for　Ga2O3　nanomaterials,　and　these　studies　about　the　evolution　of　nanowires　growth　can　provide　a　reference　for　the　change　of　growth　direction　of　nanowires　and　simplify　planar　device　processing　technology.