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Inventor:

陈为 (陈为.) [1] (Scholars:陈为) | 郑健博 (郑健博.) [2] | 张丽萍 (张丽萍.) [3]

Indexed by:

incoPat

Abstract:

本实用新型涉及一种适用于高压大功率高频变压器的绕组结构, 包括箔绕式箔形导体绕组以及设置于箔形导体绕组端部的导磁材料。本实用新型绕组结构可显著减少箔形绕组端部高频涡流损耗。

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Patent Info :

Type: 实用新型

Patent No.: CN201822097977.6

Filing Date: 2018/12/14

Publication Date: 2019/7/9

Pub. No.: CN209087545U

公开国别: CN

Applicants: 福州大学

Legal Status: 授权

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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