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author:

王松柏 (王松柏.) [1]

Indexed by:

CQVIP

Abstract:

采用低温(21 K-300K)稳态表面光伏实验方法,对腐蚀前后的半绝缘砷化镓(Si-GaAs)样品进行了大量的实验测量,发现其表面光伏谱可分为三个区域,并对三个区域的成因进行了合理的物理分析.

Keyword:

三个区域 半绝缘GAAS 表面光伏谱

Community:

  • [ 1 ] 福州大学物理与信息工程学院,福建福州350002

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Source :

江西科学

ISSN: 1001-3679

Year: 2005

Issue: 5

Volume: 23

Page: 548-551

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count: -1

30 Days PV: 4

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