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author:

Chen, Z.-H. (Chen, Z.-H..) [1] | Ding, K.-N. (Ding, K.-N..) [2] (Scholars:丁开宁) | Xu, X.-L. (Xu, X.-L..) [3] | Li, J.-Q. (Li, J.-Q..) [4]

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Abstract:

Thiophene adsorption on the Rh(111) surfaces has been investigated by density functional theory. The results show that the adsorption at the hollow and bridge sites is the most stable. The molecular plane of the thiophene ring is distorted, the C=C bond is stretched to 1.448 Å and the C-C bond is shortened to 1.390 Å. The C-H bonds tilt 22∼42° away from the surface. The calculated adsorption geometries are in reasonable agreement with population analysis and density of states. The thiophene molecule obtains 0.74 electrons reflecting the interaction between the lone pair of sulfur and the d-orbitals of metal. The reaction paths and transition states for desulfurization of the molecule have been investigated. The bridge adsorption structure of thiophene leads to a thiol via an activated reaction with an energetic barrier of 0.30 eV. This second step is slightly difficult, and dissociation into a C4H4 fragment and a sulfur atom is possible, with an energetic barrier of 0.40 eV.

Keyword:

(111) surface; Adsorption; Calculations; DFT; Rhodium; Thiophene

Community:

  • [ 1 ] [Chen, Z.-H.]Department of Chemistry, Fuzhou University, Fuzhou 350108, China
  • [ 2 ] [Chen, Z.-H.]Department of Information Technology, Fujian Education College, Fuzhou 350001, China
  • [ 3 ] [Ding, K.-N.]Department of Chemistry, Fuzhou University, Fuzhou 350108, China
  • [ 4 ] [Xu, X.-L.]Department of Chemistry, Fuzhou University, Fuzhou 350108, China
  • [ 5 ] [Li, J.-Q.]Department of Chemistry, Fuzhou University, Fuzhou 350108, China

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Source :

Jiegou Huaxue

ISSN: 0254-5861

CN: 35-1112/TQ

Year: 2010

Issue: 1

Volume: 29

Page: 93-101

0 . 6 2 4

JCR@2010

5 . 9 0 0

JCR@2023

ESI Discipline: CHEMISTRY;

JCR Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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